Allicdata Part #: | HUF75842S3ST-ND |
Manufacturer Part#: |
HUF75842S3ST |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 150V 43A D2PAK |
More Detail: | N-Channel 150V 43A (Tc) 230W (Tc) Surface Mount D²... |
DataSheet: | HUF75842S3ST Datasheet/PDF |
Quantity: | 1000 |
FET Feature: | -- |
Power Dissipation (Max): | 230W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D²PAK (TO-263AB) |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Series: | UltraFET™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 150V |
Current - Continuous Drain (Id) @ 25°C: | 43A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 42 mOhm @ 43A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 175nC @ 20V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 2730pF @ 25V |
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The HUF75842S3ST is a N-Channel single common source depletion mode MOSFET that displays very low ON-state resistance (RDS(ON)) and fast switching speed. It is designed for use in a variety of power converters that require high amounts of power and efficiency in a compact package. The MOSFET’s Wide Operating Voltage range, from -5V to 20V, allows for an ultra-low operating voltage, which can help reduce system costs and decrease of energy consumption. The HUF75842S3ST is a versatile and reliable solution for applications in which there is high-current stress and a need for high-efficiency power conversion. The device is packaged in a low-profile, surface mounted TO-252-3PAK to maximize space saving.
The HUF75842S3ST is a N-Channel enhancement mode MOSFET designed for applications including synchronous rectifiers, AC/DC and DC/DC converters. The MOSFET can be used as a low-side switch in systems that operate with a Negative Gate Source voltage, such as buck converters. The wide range of supply voltage, from -5 to -20V, and the low-level RDS(ON) values at -2V guarantee low-cost and energy efficient power conversion.
The working principle of the HUF75842S3ST device is based on the metallic-oxide-semiconductor structure, also known as the MOS structure. MOSFETs are made of a thin layer of semiconductor insulator (the gate), between a source region and a drain region. When the gate terminal is positively charged, the MOSFET turns on, allowing current to flow from the source to the drain. The gate voltage controls the current flow between the source and drain terminals, so that the gate voltage can be used to control the power output of the device.
The HUF75842S3ST is a single MOSFET in a TO-252-3PAK package, which is suitable for surface mounted applications. The device has a low-level RDS(ON) of -2V and a maximum drain-source voltage (VDSS) of 20V, which allows for a wide range of operating voltages and provides low-cost energy efficient power conversion. The device also has a low gate-threshold voltage of -3V and a fast switching speed of 10ns, meaning the device can switch very quickly. This ensures that it is suitable for a wide range of power conversion applications that require fast switching, such as buck converters.
The HUF75842S3ST can be used in a variety of applications, including automotive, industrial and consumer electronics, such as battery chargers, LED lighting, AC/DC and DC/DC converters, and synchronous rectifiers. The HUF75842S3ST can provide a high amount of power, low-level RDS(ON) and fast switching speed, making it a great solution for high-efficiency power conversion applications.
The specific data is subject to PDF, and the above content is for reference
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