| Allicdata Part #: | HUF75925D3ST-ND |
| Manufacturer Part#: |
HUF75925D3ST |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 200V 11A DPAK |
| More Detail: | N-Channel 200V 11A (Tc) 100W (Tc) Surface Mount TO... |
| DataSheet: |  HUF75925D3ST Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package: | TO-252AA |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 100W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1030pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 78nC @ 20V |
| Series: | UltraFET™ |
| Rds On (Max) @ Id, Vgs: | 275 mOhm @ 11A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 11A (Tc) |
| Drain to Source Voltage (Vdss): | 200V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
Description
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
HUF75925D3ST is a single N-Channel HexFET transistor, produced by ON Semiconductor. It is specifically designed for automotive applications and has a high reverse drain-source breakdown voltage. This device has many applications, including power distribution switches, power supply systems, high voltage circuits, automotive audio, and various other industrial applications. The transistor features a dynamic drain-source on-state resistance (RDS(on)) from 0.15 to 0.30 ohms, making it suitable for low power applications as well. Its drain-source breakdown voltage ranges from 24 to 30 volts. It has a low gate charge, which makes it ideal for high frequency switching applications. This transistor also features a low gate threshold voltage, making it suitable for low gate drive applications.The HUF75925D3ST is an MOSFET (Metal-Oxide Semiconductor Field-Effect Transistor) which is composed of a layer of semiconductor material sandwiched between two conducting plates. It is also sometimes referred to as a IGFET (Insulated-Gate Field-Effect Transistor). The conductive plates are called the source and the drain. The semiconductor material is commonly referred to as the channel.The working principle of the HUF75925D3ST is the presence of a voltage on the gate terminal which controls the flow of current between the source and the drain. When the gate voltage is increased, electrons flow freely and the transistor operates in the \'on\' state. The current flows between the source and the drain and the transistor starts to conduct. When the gate voltage is decreased, the transistor switches to the \'off\' state, as the electrons are no longer able to pass between the source and the drain.The HUF75925D3ST is designed for efficient use in several applications. As a power switching solution, this MOSFET is suitable for use in both high and low current applications. It is also ideal for use in switching power supplies, lighting power systems, automotive circuits, audio applications and other industrial applications. Moreover, its low gate charge makes it suitable for high frequency switching applications. Its low gate threshold voltage also makes this device suitable for low gate drive applications. In conclusion, the HUF75925D3ST is an ideal transistor for many applications, including automotive circuits, audio systems, power distribution systems and various other industrial applications. It is an MOSFET transistor which controls the flow of current between the source and the drain by varying the voltage on the gate terminal. Its low gate charge, low on-state resistance and low gate threshold voltage make it suitable for high frequency switching and low gate drive applications.
The specific data is subject to PDF, and the above content is for reference
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