HUF76419S3ST-F085 Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	3V @ 250µA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	D²PAK (TO-263AB)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	100W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	870pF @ 25V
Vgs (Max):	±16V
Gate Charge (Qg) (Max) @ Vgs:	28.5nC @ 10V
Series:	Automotive, AEC-Q101, PowerTrench®
Rds On (Max) @ Id, Vgs:	35 mOhm @ 29A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	29A (Tc)
Drain to Source Voltage (Vdss):	60V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Last Time Buy
Packaging:	Tape & Reel (TR)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The HUF76419S3ST-F085 belongs to a family of insulated gate field effect transistors (IGFETs). It is a single, unipolar, n-channel MOSFET that is primarily used for power management applications. The HUF76419S3ST-F085 is the latest addition to the popular series of high voltage MOSFETs from Hitachi, who have been producing reliable and high performance power solutions for more than 3 decades. The device is characterized by its low on-resistance characteristics, excellent thermal stability and wide range of temperature operating capability.The HUF76419S3ST-F085 is an optimal solution for a wide range of high power applications, such as in automotive and modern electronic equipment, including high dynamic signal conversion and current sensing. Its high breakdown voltage of 800V make it suitable for applications requiring a high input voltage, while its low output voltage makes it suitable for applications needing a low voltage DC source. Its low total gate charge (QG) makes it ideal for applications that require frequent switching or high operating speeds.The HUF76419S3ST-F085 can operate over a wide range of temperatures, up to +200°C. It has a maximum continuous drain current (ID) of 8A, and its peak drain current (ID) rating is 40A at a temperature of 25°C. The HUF76419S3ST-F085 also has an RDS(ON) of 10mΩ at 10V and 6mΩ at 4.5V, making it an ideal choice for applications that require considerably low on-resistance.The HUF76419S3ST-F085 operates through an insulated gate field effect principle. This means that there is an insulated gate that controls the transistor’s current between the source and drain regions. The insulated gate is connected to the gate electrode which allows the device to be controlled via an external voltage source. The gate voltage (VG) contributes to the variation of the transistor’s current in between the drain and source regions by allowing for a variation in voltage (VDS) between the drain and source. In the case of the HUF76419S3ST-F085, the applied gate voltage (VG) must be greater than the drain-to-source voltage in order for the device to become active.Due to its superior thermal and electrical performance characteristics, the HUF76419S3ST-F085 is widely used for general switch mode applications such as for dc-dc converters, motor control, automotive applications and current sensing. The device also provides excellent thermal stability and a wide operating temperature. Additionally, the low total gate charge makes it an ideal choice for applications that require frequent switching and high operating speeds.The HUF76419S3ST-F085 is an advanced insulated gate field effect transistor that offers reliable power management and performance in applications ranging from automotive to modern electronic equipment. Its high voltage capacity, low on-resistance, and wide temperature range make it an ideal choice for applications needing a device with superior electrical characteristics, while its insulated gate field effect principle allows for control via an external voltage source. The HUF76419S3ST-F085 is an excellent choice for general switch mode applications where current sensing and high operating speeds are desired.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description