Allicdata Part #: | HUF76429D3ST-ND |
Manufacturer Part#: |
HUF76429D3ST |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 20A DPAK |
More Detail: | N-Channel 60V 20A (Tc) 110W (Tc) Surface Mount TO-... |
DataSheet: | HUF76429D3ST Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | TO-252AA |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 110W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1480pF @ 25V |
Vgs (Max): | ±16V |
Gate Charge (Qg) (Max) @ Vgs: | 46nC @ 10V |
Series: | UltraFET™ |
Rds On (Max) @ Id, Vgs: | 23 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 20A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
HUF76429D3ST is a component part of the "High-Side Automotive Smart FET (HASFET)" category of transistors. This component is ideal for high-side switching applications, such as those found in automotive systems. The component has numerous features which make it a great choice for this type of application.
Overview of the HUF76429D3ST
The HUF76429D3ST is an "N-Channel Enhancement Mode Field Effect Transistor" (NM-FET). This component is specifically designed for use in high-side switching applications. The component contains a logic level gate, meaning that it can switch with voltages as low as 3.9V; this makes it ideal for use in low voltage systems. The component also features high current and low on-state resistance for efficient power management.
Application Field of the HUF76429D3ST
As mentioned, the HUF76429D3ST is primarily used in high-side switching applications. This component is ideal for use in automotive systems due to its low on-state resistance and its ability to switch at low gate voltages. The component can also be used in industrial systems and applications that require efficient power management. It is a great choice for use in systems where minimal power dissipation and fast switching speeds are desired.
Working Principle of the HUF76429D3ST
The working principle of the HUF76429D3ST is based on the "enhancement mode". In this mode, the transistor behaves like a closed switch when there is no significant voltage applied: the source and drain remain at the same voltage level (usually 0V). When a small voltage is applied to the gate, the transistor opens, allowing current to flow between its source and drain. The amount of current that can flow through the component depends on its on-state resistance and the amount of voltage applied to the gate.
In high-side switching applications, the HUF76429D3ST is used to control the current that flows to a device or system. By carefully setting the gate voltage, it is possible to control the amount of current that passes through the component. This is useful for controlling the power to a system without having to use an additional control circuit.
Conclusion
The HUF76429D3ST is a great choice for automotive and industrial systems that require efficient high-side switching. The component features a logic level gate for low voltage operation and low on-state resistance for improved power management. The component is based on the enhancement mode of operation, allowing it to be used as a switch without the need for additional control circuits. All of these features make the HUF76429D3ST a great choice for high-side switching applications.
The specific data is subject to PDF, and the above content is for reference
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