HUF76429P3 Allicdata Electronics
Allicdata Part #:

HUF76429P3-ND

Manufacturer Part#:

HUF76429P3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 60V 47A TO-220AB
More Detail: N-Channel 60V 47A (Tc) 110W (Tc) Through Hole TO-2...
DataSheet: HUF76429P3 datasheetHUF76429P3 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 110W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1480pF @ 25V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V
Series: UltraFET™
Rds On (Max) @ Id, Vgs: 22 mOhm @ 47A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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FETs stand for \'field effect transistors\' and are transistors that use an electrical field to control current in the device. MOSFETs, also known as metal oxide semiconductor field-effect transistors, are a type of FET that uses two types of gate electrodes in order to regulate the current flow. The HUF76429P3 is a single MOSFET with a d-mos structure, and is the perfect choice for a variety of applications.

Application Field

The HUF76429P3\'s key features make it ideal for a variety of applications, such as motor control, power management, inverters, converters, audio amplifiers, solar energy harvesting and battery charging.

Motor control applications are particularly popular due to its excellent linearity, high switching frequency, high-input impedance and low threshold voltage, while its low gate charge makes it perfect for use in battery charging and solar energy harvesting.

Power management applications such as DC-DC converters, buck and boost converters, and battery management systems benefit from the HUF76429P3\'s low on-resistance and excellent thermal stability.

Working Principle

The HUF76429P3\'s operation is based on the basic principles of MOSFET technology. A metal oxide semiconductor is placed between two layers of insulation, called the gate and drain. A voltage is applied to the gate which creates an electrical field, also called a \'gate voltage\'. This electrical field then controls a current between the drain and source.

When the gate voltage is higher than the \'threshold voltage\', the electrical field between the drain and source increases, causing current to flow through the device. This is known as "on state". Conversely, when the gate voltage is lower than the threshold voltage, the electrical field is no longer strong enough to attract current, meaning that the device is in an "off state".

The HUF76429P3 also features low output capacitance, low gate charge and low parasitics, which helps to minimize power losses and reduce EMI. With excellent thermal stability and power dissipation, this single MOSFET can provide excellent performance in a wide variety of applications.

Conclusion

The HUF76429P3 is a single MOSFET designed for a variety of applications, including motor control, power management, inverters, converters, audio amplifiers, solar energy harvesting and battery charging. Its excellent thermal stability, low gate charge and low on-resistance make it the perfect choice for power-efficient designs, while its low output capacitance and threshold voltage ensure high-performance operation.

The specific data is subject to PDF, and the above content is for reference

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