Allicdata Part #: | HUF76429S3S-ND |
Manufacturer Part#: |
HUF76429S3S |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 47A D2PAK |
More Detail: | N-Channel 60V 47A (Tc) 110W (Tc) Surface Mount D²P... |
DataSheet: | HUF76429S3S Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D²PAK (TO-263AB) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 110W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1480pF @ 25V |
Vgs (Max): | ±16V |
Gate Charge (Qg) (Max) @ Vgs: | 46nC @ 10V |
Series: | UltraFET™ |
Rds On (Max) @ Id, Vgs: | 22 mOhm @ 47A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 47A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The HUF76429S3S is a high voltage vertical DMOS High-Speed Switching FET from Diodes Incorporated. It is designed to provide an efficient switching solution for controlling power supplies and loads in many high voltage applications. With a breakdown voltage of 200V and a current of 5A, the HUF76429S3S is an ideal choice for DC to DC converters, motor control and switching power supplies. The FET also has an extremely low on-resistance of 0.5Ω at 10A and an attainable switching frequency of 2MHz. The HUF76429S3S has been designed for surface mount technology and features a thermally enhanced packaging. This make it suitable for use in high density applications that require both high speed and low on-resistance.
The HUF76429S3S is a single DMOS FET. It is one of the members of the family of vertical DMOS FETs and is classified as a field effect transistor. As with any FET, it is operated using an arrangement of two terminals, the source and the drain. The source of the FET, in this case is connected to the source terminal, while the drain is connected with the drain terminal. The FET works by trying to maintain a charge balance between the source and the drain and, as a result, can be used to amplify signals and switch large voltages and currents.
The operation of the HUF76429S3S, like any other FET, begins with supplying a voltage to the gate terminal. The voltage applied to the gate terminal creates an electrical field between the source and drain, which allows the FET to control the current flow. The electrical field creates a band gap between the source and drain, which in turn holds it in a partially conducting or ‘off’ state. If enough voltage is applied to the gate terminal, then the band gap is increased and the FET can be switched to an ‘on’ state, allowing an electric current to move through it. The speed at which it can switch is dependent on how quickly the gate can be charged. The HUF76429S3S has an extremely fast switching time and is capable of switching at speeds up to 2 MHz.
The HUF76429S3S is a great choice for high voltage applications requiring high speeds, low on-resistance and surface mount technology. It is designed to provide an efficient switching solution for controlling power supplies and loads in many high voltage applications. It is a versatile transistor which can be used for many different applications, including DC to DC converters, motor control and switching power supplies. The device can also be used to amplify signals due to its low on-resistance. Overall, the HUF76429S3S is an ideal device for applications requiring high efficiency and high speed switching.
The specific data is subject to PDF, and the above content is for reference
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