HUF76439S3ST Discrete Semiconductor Products

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The HUF76439S3ST is a N-Channel Enhancement Mode MOSFET with an absolute maximum rating of 30V DC, 5A DC, 180 W and an RDS(on) of 0.11Ω. It has a drain-source breakdown voltage of 30V and an output capacitance of around 74pF. This device is suitable for use in logic level and low/medium voltage applications.

N-channel MOSFETs (metal-oxide-semiconductor field-effect transistors) are transistors that are used to control the flow of electric current through a circuit. They work by manipulating the electric fields generated by metal electrodes, called the “gate”, which is the controlling input into the transistor. A typical N-channel MOSFET is a three-terminal, semiconductor device which consists of the following components: the gate, drain and source.

The HUF76439S3ST transistor’s application field and working principle are as follows:

The primary application for the HUF76439S3ST is in modern logic level/low/medium power applications, such as audio amplifiers, digital logic circuits, and switching power supplies. Specifically, due to its low on-resistance and low capacitance, this transistor is most suitable for use in high-frequency switching applications. It can also be used in various other applications, such as computer control circuits, DC motor control and inductive loads, etc.

The working principle of the HUF76439S3ST is simple: when a positive gate voltage is applied, electrons in the channel region of the MOSFET are attracted to the gate electrode, forming a conducting channel between the drain and source of the transistor, allowing current to flow through the circuit. When the gate voltage is reduced or reversed, the MOSFET is “OFF”, and no current can flow through the circuit.

The HUF76439S3ST is ideal for applications where low on-resistance (< 0.11Ω) is important. It has very low input capacitance and can handle high frequencies, making it suitable for high-frequency switching applications. Its drain-source breakdown voltage (VDS) of 30V makes it safe to use in low voltage logic level applications, while still being able to deliver high power.

In conclusion, the HUF76439S3ST N-Channel Enhancement Mode MOSFET is an ideal choice for a wide range of applications where low on-resistance and high-frequency switching is required. It has a low on-resistance of 0.11Ω, a drain-source breakdown voltage of 30V, and an output capacitance of around 74pF. This device is safe for use in low voltage logic level applications and can handle high frequency switching. It is suitable for audio amplifiers, digital logic circuits, and switching power supplies, along with many other applications.

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