Allicdata Part #: | HUF76445P3-ND |
Manufacturer Part#: |
HUF76445P3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 75A TO-220AB |
More Detail: | N-Channel 60V 75A (Tc) 310W (Tc) Through Hole TO-2... |
DataSheet: | HUF76445P3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | UltraFET™ |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 75A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 6.5 mOhm @ 75A, 10V |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 150nC @ 10V |
Vgs (Max): | ±16V |
Input Capacitance (Ciss) (Max) @ Vds: | 4965pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 310W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220AB |
Package / Case: | TO-220-3 |
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HUF76445P3 transistors are high performance complementary field effect transistors (FETs) that are designed to handle high frequency switching applications. These transistors have a higher power rating, better thermal stability and lower circuit impedance than traditional bipolar transistors. HUF76445P3 transistors are widely used in high-speed switching regulators, load switches, and power amplifiers.
The HUF76445P3 is a type of MOSFET, an acronym for Metal–Oxide–Semiconductor Field-Effect Transistor. MOSFETs are used to amplify or switch electronic signals at high frequencies and are widely used in modern electronics. The HUF76445P3 is a type of single-channel, enhancement-mode MOSFET that is capable of high-frequency switching from 0 Hz to 250 MHz. The device has a blocking voltage of 45 V and a drain-source current of 600 mA, making it suitable for a wide range of applications that include power amplifiers, high-current load switches, and high-speed switching regulators.
The HUF76445P3 transistor is composed of three main components, the source, the gate, and the drain. The source and drain are two terminals of the device, while the gate is a the third terminal that provides the control signal to the device. When a positive DC voltage is applied to the gate, a channel is created between the source and drain. This is known as enhancement-mode, since the channel is enhanced when the gate voltage is increased. The current that flows through the channel is controlled by the gate voltage, making it easy to control the current of the transistor.
The working principle of the HUF76445P3 transistor is relatively simple. When the switch is initially turned on, the drain-source path is open and current does not flow from the source to the drain. When a positive gate voltage is applied to the device, a channel is created between the source and the drain and current begins to flow. As the gate voltage is increased, the current through the channel increases correspondingly. When the gate voltage is removed, the channel is shut off and current stops flowing. This process is repeated each time the gate voltage is applied, thus allowing the device to be used as a switch.
HUF76445P3 devices can be used in a variety of applications, ranging from load switches and power amplifiers to high-speed switching regulators. The device is capable of high-frequency switching and has a current capability of 600 mA, making it suitable for a number of applications. The transistor has a blocking voltage of 45V, which is enough to handle a wide range of switching applications. The device is also designed to handle higher power ratings, better thermal stability, and lower circuit impedances than traditional bipolar transistors, making it an ideal choice for high-frequency switching applications.
The specific data is subject to PDF, and the above content is for reference
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