HUF76629D3

Vgs(th) (Max) @ Id:	3V @ 250µA
Package / Case:	TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package:	TO-251AA
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	110W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1285pF @ 25V
Vgs (Max):	±16V
Gate Charge (Qg) (Max) @ Vgs:	46nC @ 10V
Series:	UltraFET™
Rds On (Max) @ Id, Vgs:	52 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	20A (Tc)
Drain to Source Voltage (Vdss):	100V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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The HUF76629D3 is a type of Field-Effect Transistor (FET) specifically a Metal-Oxide Semiconductor FET (MOSFET). It is a single N-channel device with a drain-source voltage rating of 30 V. This FET has been designed to offer a wide range of advantages in a variety of applications like power switches, analogue amplifiers, logic gates and interface circuits.The working principle of a MOSFET is based on the use of an internal electric field to control the flow of current between the source and drain. It is a specialized electronic component, made up of four main components- the gate, source, drain and substrate. The most important part of the FET is the gate. It is the pin used to control the voltage applied to the drain and the source, which in turn determines the current through the organic layer present between the drain and the source.When the voltage necessary for triggering the MOSFET is applied to the gate, a channel is formed between the source and drain, allowing current to flow through. This forms the basis of the MOSFET working principle. As far as the HUF76629D3 is concerned, the gate trigger voltage is 7V and the maximum allowable drain current is 5A.The HUF76629D3 is mainly used in the power switch and logic gate application fields. In power switches, the FET is used as a switch because of its capability to source or block large amounts of current, which is controlled by the gate voltage. It is being increasingly used in the fields of robotics and automation due to its high switching speed, high-to-low input impedance ratio and its gate trigger voltage.In logic gate applications, the FET is used to implement not, or or and gates. It is used because of its voltage-controlled switching capabilities and its ability to transfer data at very high speeds. Its gate trigger voltage also makes it ideal for logic gates as it is easy to control the switching of logic levels.In addition to its use in power switch and logic gate applications, the HUF76629D3 is also used in analog amplifier circuits. It can be used in input amplifiers, voltage regulators, active filters and power amplifiers. Due to its wide voltage range, high input impedance and low output impedance, it is suitable for use in many different analog circuits.In summary, the HUF76629D3 is a state-of-the-art single N-channel MOSFET which is used for a variety of applications. Its main uses are in power switches, logic gates and analog amplifier circuits. Its voltage-controlled switching and high input impedance make it ideal for data transfer at very high speeds and its gate trigger voltage makes it suitable for implementing not, or and and gates. Its use in analog amplifiers and voltage regulators is attributed to its wide voltage range and low output impedance.

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