HUF76633P3

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HUF76633P3 is a wide range series of high voltage n-channel enhancement mode field effect transistors manufactured by STMicroelectronics. This series is suitable in a wide range of applications like switch mode power supplies, audio amplifiers, motor control, and RF power amplifiers.

The HUF76633P3 series is designed to minimize on-state resistance. The HUF76633P3 series also includes devices with maximum current ratings of up to 80A, and voltage ratings of up to 600V. The unique “dual-gate” structure of the device provides superior performance over previous versions of the FET and also gives the device better input and output characteristics. The HUF76633P3 series also features improved thermal characteristics with a low Rds(on) value which reduces energy loss and heat dissipation while maintaining a low temperature rating.

The HUF76633P3 is an enhancement type FET or Field Effect Transistor. The device is made up of two sources, a gate and a drain, connected to a single channel. The gate is the control electrode, and when a positive voltage is applied to the gate, it attracts the electrons from the source to the channel and creates an inversion channel. This inversion channel makes the channel a ‘conductive’ medium, and current flows from the source to the drain.

In a typical application, the HUF76633P3 is used to drive a high voltage load, such as a motor. The drain and source of the FET are connected to the motor, and when a positive voltage is applied to the gate, electrons move from the source to the drain, allowing current to flow through the motor. By controlling the gate voltage, the amount of current flowing through the motor can be regulated.

The HUF76633P3 also features a superior thermal design, which increases power efficiency. The dielectric layer is designed to provide superior thermal resistance, reducing the need for extra thermal management. Additionally, the device features a high frequency response, making it suitable for high-speed applications.

The operating temperature range of the HUF76633P3 is from -55C to +175C and it has a maximum power dissipation of 4Watt. It also includes ESD protection and it has an integrated reverse voltage clamp for protection against overvoltage. The HUF76633P3 is extremely reliable and it includes an integrated protection diode for added reliability.

Overall, the HUF76633P3 provides superior performance in a wide range of applications featuring a high voltage, low on-state resistance, and improved thermal characteristics. The device has a wide operating temperature range and is ideal for driving high voltage loads, such as motors and power supplies. The integrated protection diode adds reliability and the high frequency response makes the device suitable for high-speed applications.

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