HUF76633S3ST Allicdata Electronics
Allicdata Part #:

HUF76633S3ST-ND

Manufacturer Part#:

HUF76633S3ST

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 100V 38A D2PAK
More Detail: N-Channel 100V 39A (Tc) 145W (Tc) Surface Mount D²...
DataSheet: HUF76633S3ST datasheetHUF76633S3ST Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D²PAK (TO-263AB)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 145W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1820pF @ 25V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V
Series: UltraFET™
Rds On (Max) @ Id, Vgs: 35 mOhm @ 39A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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HUF76633S3ST is a single monolithic high-speed MOSFET (Metal Oxide Semiconductor Field Effect Transistor) that is commonly used in electronic applications. It is a type of semiconductor device, where the controlled flow of electrons is generated and affected by the applied electrical fields. This makes it ideal for a wide range of applications where an amplifying or switching function is required.

The HUF7633S3ST is a N-channel MOSFET (as opposed to a P-channel), and is a depletion mode device. This means that the drain to source current is caused by the presence of electrons in the channel, so that a lower gate voltage is needed to enable the drain current. This makes it well-suited for low-voltage applications as well as high-power switching circuitry.

The primary application of the HUF76633S3ST is in motor control and in automotive electronics. It is typically used in motor applications such as electric motors, starters, and generators. It is also used in air ride suspension, which uses it to open and close the air valves that control the movement of the suspension. Additionally, it is used in power switching circuits, where it is used to connect devices to a power source. Finally, it is often used as a switch to control the flow of electricity in electronic circuits.

The working principle of the HUF76633S3ST is based on the electrical field effect. The transistor consists of four regions: the source, drain, gate, and substrate. Voltage is applied to the gate to create an electrostatic field, which is then used to modify the conductance of the channel (i.e. the resistance in the channel between the source and drain). This conductance is proportional to the applied gate voltage. By increasing the gate voltage, the resistance in the channel is decreased, thus allowing for a greater current flow between the source and drain.

The HUF76633S3ST is designed for use in a variety of applications due to its high-speed switching capabilities, low-voltage operation, and its excellent thermal and operating temperature range. It is an excellent choice for applications where a high-speed and reliable switch is required, such as motor control, automotive power switching circuits, and air ride suspension systems. Additionally, its low-voltage operation means that it is well suited for use in low-voltage electronic circuitry.

The specific data is subject to PDF, and the above content is for reference

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