Allicdata Part #: | HUF76639P3-ND |
Manufacturer Part#: |
HUF76639P3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 100V 50A TO-220AB |
More Detail: | N-Channel 100V 51A (Tc) Through Hole TO-220AB |
DataSheet: | HUF76639P3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
Series: | UltraFET™ |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100V |
Current - Continuous Drain (Id) @ 25°C: | 51A (Tc) |
Rds On (Max) @ Id, Vgs: | 26 mOhm @ 51A, 10V |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 86nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 2400pF @ 25V |
FET Feature: | -- |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220AB |
Package / Case: | TO-220-3 |
Description
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The HUF76639P3 is a type of N-channel MOSFET. It is a power field-effect transistor (FET) with high current handling capability and low on-state resistance that make it suitable for high speed, low power switch mode applications. It is a single transistor device that has a low on-resistance and can be used to switch higher currents than the traditional P-channel MOSFETs.The HUF76639P3 is an N-channel MOSFET that is designed to provide high current protection and low on-resistance. It is a single series MOSFET with a rating of 15A, a breakdown voltage of 30V, and a gate voltage of 8V. The HUF76639P3 is designed to be able to withstand high frequency switching, and a low operating voltage to increase efficiency.In its most common application, the HUF76639P3 is used as a switch in power circuits. When the gate voltage is applied, the transistor will turn on, allowing the current through the load, and when the gate voltage is removed, the transistor will turn off, preventing current from flowing through the load.The working principle of the HUF76639P3 is that it consists of two terminals, the gate and the source. When a voltage is applied to the gate, the current begins to flow through the source and reaches the drain, which is connected to the load. The gate then acts as a switch, allowing or preventing the current flow. The MOSFETs with high breakdown voltage serve as a gate protection, which helps to prevent excessive current from flowing from the drain to the source. The HUF76639P3 can also be used in high frequency circuits, since it has high switching rates and low on resistance ratings.The HUF76639P3 has several advantages, such as its fast switching times, low on-state resistance, and high current handling capabilities. Its advantages make it a popular choice for high frequency switching applications, such as in automotive and computer power supplies. The HUF76639P3 is also a popular choice for high powered applications, including motor drivers, power electronics, and while most high powered applications require a large area to be occupied by the device, the compact size of the MOSFETs can reduce this area and make them easier to use.The HUF76639P3 is an efficient MOSFET, designed to provide high current protection and low on-state resistance. It is suitable for high speed,low power switch mode applications, such as motor drivers, power electronics, and automotive and computer power supplies. The HUF76639P3 can handle high frequency switching and low operating voltages to improve efficiency and safety. Overall, the HUF76639P3 is a reliable and efficient single series MOSFET, suitable for a variety of applications.The specific data is subject to PDF, and the above content is for reference
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