HUF76639S3S

Vgs(th) (Max) @ Id:	3V @ 250µA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	D²PAK (TO-263AB)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	180W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2400pF @ 25V
Vgs (Max):	±16V
Gate Charge (Qg) (Max) @ Vgs:	86nC @ 10V
Series:	UltraFET™
Rds On (Max) @ Id, Vgs:	26 mOhm @ 51A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	51A (Tc)
Drain to Source Voltage (Vdss):	100V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

HUF76639S3S Application Field and Working PrincipleHUF76639S3S is a P-channel field-effect transistor (FET) designed for high current, high voltage amplifier applications. It is commonly used in switching applications such as power supplies and audio amplification. HUF76639S3S transistors feature an N-channel MOSFET structure and are fabricated using an insulated-gate process technology. The gate of an HUF76639S3S FET is connected to a source terminal that is electrically isolated from the substrate. This feature allows for extremely low on-resistance and high current-handling capability.The HUF76639S3S FET is capable of switching currents up to 100A and offers a low on-resistance of 0.15 ohms. It has a breakdown voltage of 100V, making it ideal for powering systems that require higher voltages. The HUF76639S3S also features an integrated temperature sensor that allows for temperature compensation and optimal performance.The HUF76639S3S FET is typically used in switching applications such as DC-DC converters and power supplies. In a DC-DC converter, the HUF76639S3S will be used to control the flow of current. The gate voltage of the FET will be adjusted to vary the switching speed and efficiency. The FET can also be used as an amplifier in audio applications. In this case, the gate voltage will be adjusted to control the gain of the amplifier.The working principle of the HUF76639S3S is based on the transfer of charge carriers from the source to the drain. When the gate of the FET is held at the same voltage as the source, the channel is open and the transistor is in an \'on\' state. Electrons flow from the source to the drain, allowing current to flow through the channel. When the gate voltage is increased, the channel is effectively \'closed\', preventing current from flowing through the FET.The HUF76639S3S FET is a versatile and powerful device and is commonly used in a variety of applications. Its high current-handling capability and low on-resistance make it an ideal choice for switching, power supply, and audio amplification applications. With its integrated temperature sensor, the HUF76639S3S is able to provide optimal performance and efficiency in any application.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description