HUF76639S3ST-F085 Discrete Semiconductor Products |
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Allicdata Part #: | HUF76639S3ST-F085TR-ND |
Manufacturer Part#: |
HUF76639S3ST-F085 |
Price: | $ 1.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N CH 100V 51A TO-263AB |
More Detail: | N-Channel 100V 51A (Tc) 180W (Tc) Surface Mount D²... |
DataSheet: | HUF76639S3ST-F085 Datasheet/PDF |
Quantity: | 1000 |
800 +: | $ 0.94850 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D²PAK (TO-263AB) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 180W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2400pF @ 25V |
Vgs (Max): | ±16V |
Gate Charge (Qg) (Max) @ Vgs: | 86nC @ 10V |
Series: | UltraFET™ |
Rds On (Max) @ Id, Vgs: | 26 mOhm @ 51A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 51A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Last Time Buy |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The application field and working principle of HUF76639S3ST-F085, a single FET (field-effect transistor) form a major part of today\'s digital and analogue electronics, and is a component of many items ranging from computers and other digital devices to radio circuits, electric tools and toys and more.
FETs are three-terminal devices that take advantage of the electric field to control the current, usually for amplification and switching applications. Unlike bipolar junction transistors (BJTs, which use a current to control current flow), FETs are voltage-controlled devices and are highly efficient, requiring very little current to control the current flow. However, unlike the BJT, the FET operating characteristics depend not only on the device itself, but also on the operating environment and external biasing.
HUF76639S3ST-F085 is a single FET of P type and is also known as an N-channel enhancement-mode MOSFET device. When this device is powered up, the voltage between the gate and source terminals will control the current flow of the MOSFET. This can be either positive or negative, meaning that the MOSFET acts as either a switch or an amplifier.
The working principle of the HUF76639S3ST-F085 can be understood in four key stages: depletion, conductance, saturation, and off-state.
In the depletion stage, the FET is in an off-state condition, with no current flow. This is due to the magnitude of the voltage between the drain and source being negative and the resistance between these terminals extremely high. However, a small voltage applied to the gate terminal can reduce this resistance and cause a current to flow between the drain and source terminals.
In the conductance stage, the current flow increases as the applied voltage increases. This is particularly helpful in voltage amplification, as a small voltage can be used to control a larger current flow. This stage is also called the active stage, since the current flow between the drain and source is controlled by the gate voltage via the FET\'s internal channel.
In the saturation stage, the current flow between the drain and source reaches its maximum as the applied voltage reaches its maximum. This can help prevent further current flow through the FET, protecting it from damage and keeping more precise control of the current that does flow.
In the off-state, the FET is turned off. A large positive voltage between the source and the gate will stop any current flow and thus the FET is returned to its off-state.
HUF76639S3ST-F085 is typically used in applications such as amplifier circuits, switching circuits, and logic devices. Such applications will use the four stages of the FET\'s operation to control the current that flows. For example, in a switch circuit, the FET can be used to control the flow of current between two points, allowing or preventing the flow of current at the user\'s discretion. Similarly, in an amplifier circuit, the FET can be used to amplify the current that moves between the source and drain terminal, controlling the amount of current flow and thus the amplitude of the amplified signal.
HUF76639S3ST-F085 is a single FET device, which means it has just three terminals-gate, source and drain. It is used in a variety of electronic circuits and can be used for both amplification, as well as switching applications. The operation of this device is mainly controlled by the Gate-Source Voltage, and its working principle can be divided into four stages – Depletion, Conductance, Saturation, and Off-State. With the help of these stages, the current that flows between the source and the drain can be precisely regulated.
The specific data is subject to PDF, and the above content is for reference
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