HUF76639S3ST Discrete Semiconductor Products

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The HUF76639S3ST is a type of single N-channel insulated-gate field effect transistor (IGFET), which is commonly referred to as a MOSFET, a metal oxide semiconductor field effect transistor. It is a device commonly used for switching and amplifying electronic signals and works on the principle of the field effect. It is an evolution of the field effect transistor and was initially developed for use in memory chips and other digital applications where low power usage, smaller die size and higher integration density was needed.

The basic operation of MOSFETs like the HUF76639S3ST is generally the same, with the major distinction between models being their voltage and current ratings and other parameters. The HUF76639S3ST in particular is a single N-channel depletion mode enhancement type MOSFET supplied in a small surface-mount package with a 6 mm footprint. It is designed for low-voltage applications and is rated to handle a maximum current load of 24A, a maximum drain-source voltage of 100V, and an on-state resistance of 0.056 ohms at 25 degrees Celsius.

An FET is a three terminal device relying on majority carrier injection via terminals as opposed to a bipolar transistor which works using minority carriers. The principles of operation of all FETs are essentially the same, regardless of the type of FET. Generally speaking, a FET works by controlling the conductivity of a channel between two terminals, the Drain and Source, by controlling the amount of voltage applied to the third terminal, the Gate.

The BLF5N60CNFD from the HUF76639S3ST series has a current amplification factor of 11.5, an operating temperature of between -55 and 150 degrees Celsius, an RDS(ON) of 0.06 ohms, a total gate and output capacitance of 15.4 pF, and a Vgs(th) threshold of 3.3 volts. Power dissipation is identical between models with a maximum of 3 Watts.

The HUF76639S3ST exhibits excellent switching characteristics and is suitable for the driver stages of high current automotive applications such as power relays, solenoids and loads up to 24A. It is also well suited to low side switching applications, electronic valve control, and other applications where power is needed but noise is unwanted.

The HUF76639S3ST is a high quality and reliable component, designed to cope with the harsh automotive operating environment. Its low on-state resistance and high blocking voltage make it an ideal choice for high current applications requiring an efficient and compact component for reliable power output.

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