Allicdata Part #: | HUF76645P3-ND |
Manufacturer Part#: |
HUF76645P3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 100V 75A TO-220AB |
More Detail: | N-Channel 100V 75A (Tc) 310W (Tc) Through Hole TO-... |
DataSheet: | HUF76645P3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | UltraFET™ |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100V |
Current - Continuous Drain (Id) @ 25°C: | 75A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 14 mOhm @ 75A, 10V |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 153nC @ 10V |
Vgs (Max): | ±16V |
Input Capacitance (Ciss) (Max) @ Vds: | 4400pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 310W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220AB |
Package / Case: | TO-220-3 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
HUF76645P3 is a general-purpose S-MOSFET Power MOSFET that is well-suited to a wide range of applications. It is a single field-effect transistor (FET) in a TO-260 package, with a maximum voltage rating of 75V, a drain-source breakdown voltage of 60V, a maximum drain current of 8A, and a gate-source threshold voltage of 6V. The device provides superior power handling, low on-resistance, low gate charge, and low gate-source capacitance.
Application Field of HUF76645P3
HUF76645P3 is suitable for use as a main power switch in a variety of applications, such as solar inverters, motor control, DC/DC converters, and industrial equipment. The device is designed for operation with a low gate current, providing improved efficiency and lower switching losses. The device is also well-suited for use as a low-loss power switch in a power amplifier, switchmode power supply, or DC-to-DC converter.
HUF76645P3 is also capable of driving inductive loads with efficiency, due to its low on-resistance, which is essential for applications such as relay-drivers or contactors. In addition, the device is able to handle high peak current loads, making it an ideal choice for applications such as electric vehicle power management and battery chargers.
HUF76645P3 is also suitable for use as an eFuse, providing an efficient and low-cost power protection option. The device is able to detect over-current conditions, and quickly trip the power to protect downstream components. This makes it an ideal choice for applications such as automotive circuit protection, or any application where power-overload protection is needed.
Working Principle of HUF76645P3
HUF76645P3 works by utilizing the principle of a \'field effect\' to control current through the device. In a MOSFET (Metal Oxide Semiconductor FET), an electric field is produced between the gate and the drain-source channel. This field influences the conductivity of the channel, depending on how the voltage level of the gate is set. By controlling the gate voltage, it is possible to control the amount of current that can flow through the channel.
The HUF76645P3 is a \'Power MOSFET\', meaning it is designed to handle higher levels of current than other types of FET. This is achieved by utilizing a thicker gate oxide, which allows the device to handle higher voltages, and increased levels of current without exceeding the limit of the gate oxide.
In addition, the HUF76645P3 has low on-resistance (RDS(on)), which means that less power is dissipated when the device is conductive (on-state). This helps to reduce power losses, and improve system efficiency. It also allows the device to handle higher levels of current with lower losses, making it an ideal choice for applications such as solar inverters, motor control, and DC-to-DC converters.
Conclusion
HUF76645P3 is a single Power MOSFET, with a maximum voltage rating of 75V, a drain-source breakdown voltage of 60V, a maximum drain current of 8A, and a low gate charge. It is well-suited to a variety of applications, including energy management, motor control, solar inverters, DC-to-DC converters, relay drivers and contactors, and eFuse protection. The device utilizes the principle of a \'field effect\' to control current, and its low on-resistance properties help to reduce power losses and improve system efficiency.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
HUF75637S3_NR4895 | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 100V 44A D2PA... |
HUF75339P3 | ON Semicondu... | -- | 227 | MOSFET N-CH 55V 75A TO-22... |
HUF75344G3 | ON Semicondu... | 2.33 $ | 380 | MOSFET N-CH 55V 75A TO-24... |
HUF75321P3 | ON Semicondu... | -- | 1000 | MOSFET N-CH 55V 35A TO-22... |
HUF75639P3 | ON Semicondu... | -- | 940 | MOSFET N-CH 100V 56A TO-2... |
HUF75542P3 | ON Semicondu... | -- | 413 | MOSFET N-CH 80V 75A TO-22... |
HUF75332P3 | ON Semicondu... | -- | 747 | MOSFET N-CH 55V 60A TO-22... |
HUF75344P3 | ON Semicondu... | -- | 702 | MOSFET N-CH 55V 75A TO-22... |
HUF75545P3 | ON Semicondu... | -- | 113 | MOSFET N-CH 80V 75A TO-22... |
HUF75307D3 | ON Semicondu... | -- | 1000 | MOSFET N-CH 55V 15A IPAKN... |
HUF75307D3ST | ON Semicondu... | -- | 1000 | MOSFET N-CH 55V 15A DPAKN... |
HUF76407D3S | ON Semicondu... | -- | 1000 | MOSFET N-CH 60V 12A DPAKN... |
HUF76407D3 | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 60V 12A IPAKN... |
HUF76013D3S | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 20V 20A DPAKN... |
HUF75309D3S | ON Semicondu... | -- | 1000 | MOSFET N-CH 55V 19A DPAKN... |
HUF75309D3ST | ON Semicondu... | -- | 1000 | MOSFET N-CH 55V 19A DPAKN... |
HUF75309T3ST | ON Semicondu... | -- | 1000 | MOSFET N-CH 55V 3A SOT-22... |
HUF76609D3S | ON Semicondu... | -- | 1000 | MOSFET N-CH 100V 10A DPAK... |
HUF75307T3ST | ON Semicondu... | -- | 1000 | MOSFET N-CH 55V 2.6A SOT-... |
HUF76407P3 | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 60V 13A TO-22... |
HUF76013D3ST | ON Semicondu... | -- | 1000 | MOSFET N-CH 20V 20A DPAKN... |
HUF75309P3 | ON Semicondu... | -- | 1000 | MOSFET N-CH 55V 19A TO-22... |
HUF76609D3 | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 100V 10A TO-2... |
HUF76009D3ST | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 20V 20A DPAKN... |
HUF76013P3 | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 20V 20A TO-22... |
HUF75321D3S | ON Semicondu... | -- | 1000 | MOSFET N-CH 55V 20A DPAKN... |
HUF75321D3 | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 55V 20A IPAKN... |
HUF75617D3ST | ON Semicondu... | -- | 1000 | MOSFET N-CH 100V 16A DPAK... |
HUF76419D3ST | ON Semicondu... | -- | 1000 | MOSFET N-CH 60V 20A DPAKN... |
HUF75617D3 | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 100V 16A TO-2... |
HUF75617D3S | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 100V 16A DPAK... |
HUF76423D3S | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 60V 20A DPAKN... |
HUF76619D3ST | ON Semicondu... | -- | 1000 | MOSFET N-CH 100V 18A DPAK... |
HUF76619D3S | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 100V 18A DPAK... |
HUF76419P3 | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 60V 29A TO-22... |
HUF75321S3S | ON Semicondu... | -- | 1000 | MOSFET N-CH 55V 35A D2PAK... |
HUF75329D3 | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 55V 20A IPAKN... |
HUF75329D3S | ON Semicondu... | -- | 1000 | MOSFET N-CH 55V 20A DPAKN... |
HUF75329P3 | ON Semicondu... | -- | 1000 | MOSFET N-CH 55V 49A TO-22... |
HUF75229P3 | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 50V 44A TO-22... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...