Allicdata Part #: | HUFA75321S3ST-ND |
Manufacturer Part#: |
HUFA75321S3ST |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 55V 35A D2PAK |
More Detail: | N-Channel 55V 35A (Tc) 93W (Tc) Surface Mount D²PA... |
DataSheet: | HUFA75321S3ST Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D²PAK (TO-263AB) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 93W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 680pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 44nC @ 20V |
Series: | UltraFET™ |
Rds On (Max) @ Id, Vgs: | 34 mOhm @ 35A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 35A (Tc) |
Drain to Source Voltage (Vdss): | 55V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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。The HUFA75321S3ST is a type of junction field-effect transistor (JFET) which is used to control the flow of electricity between two regions of a circuit. It is part of a larger family of transistors known as field-effect transistors (FETs) and is considered one of the most common types. The HUFA75321S3ST is a single-gate FET, meaning it has a single control pin which is used to control the flow of current across the transistor\'s channel.
The HUFA75321S3ST is most commonly used in analog and digital circuits, such as in audio or video amplifiers, oscillators, and amplifiers. It is also used in power switching circuitry, logic-level conversion, and low-frequency signal processing. The HUFA75321S3ST specifically is a P-channel JFET, meaning it can only conduct current in one direction. This makes it perfect for use in certain applications that require a specific direction of current flow.
The HUFA75321S3ST has a low gate-to-source leakage and is capable of handling high voltages, making it suitable for applications in automotive, consumer, and industrial electronics. It also has a high input impedance and low noise, making it an ideal choice for signal amplification. Additionally, the HUFA75321S3ST\'s low capacitance makes it suitable for high speed switching applications.
The working principle of the HUFA75321S3ST is based on the creation of a potential (voltage) difference at the junction of the two regions of the transistor\'s channel. This potential difference creates an electric field which affects the flow of current through the channel. The voltage applied to the control pin influences the strength of the electric field and therefore determines the flow of current through the channel.
When voltage is applied to the gate of the HUFA75321S3ST, it causes a depletion layer to form between the source and the drain, reducing the effective width of the channel and therefore the flow of current. If the voltage applied to the gate is increased, the electric field will be stronger, further decreasing the current flow through the channel. This is how the HUFA75321S3ST is used to regulate the flow of current in circuits.
In summary, the HUFA75321S3ST is a single-gate P-channel junction field-effect transistor which is used in a wide range of applications, ranging from analog and digital circuits, to power switching circuitry, logic-level conversion, and high-speed signal processing. The working principle of the HUFA75321S3ST is based on the application of voltage to the gate which creates an electric field that affects the current flow through the transistor\'s channel.
The specific data is subject to PDF, and the above content is for reference
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