Allicdata Part #: | HUFA75329D3-ND |
Manufacturer Part#: |
HUFA75329D3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 55V 20A IPAK |
More Detail: | N-Channel 55V 20A (Tc) 128W (Tc) Through Hole TO-2... |
DataSheet: | HUFA75329D3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
Supplier Device Package: | TO-251AA |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 128W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1060pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 65nC @ 20V |
Series: | UltraFET™ |
Rds On (Max) @ Id, Vgs: | 26 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 20A (Tc) |
Drain to Source Voltage (Vdss): | 55V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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HUFA75329D3 is a high-efficiency, low-consumption FET with five-terminal 4-Lead package that is available in two configurations, N-Channel Enhancement Mode and P-Channel Enhancement Mode. This FET serves various application fields and the working principle behind its operation has been explained in the article.
Application Fields of HUFA75329D3
HUFA75329D3 is a versatile FET in terms of application fields. It is used for various applications such as in gates, clamps, power management and level shifters. In gates, it is mainly used as an inverter, buffer or as a logic function where it is used as a source-drain switch in an integrated circuit. In clamps, it is used to limit the output voltage swing, while in level shifters, it is used to convert logic signals of different voltage levels. Finally, in power management, it is used to control the speed and power of the motor that is supplied to it. All these application fields bring out the versatility of HUFA75329D3 over other FETs.
Working Principle of HUFA75329D3
HUFA75329D3 operates on the principle of transistor action in which a solid-state device with three terminals is used to amplify current. It is an enhancement-mode device, which means that the current will flow through the device only if the gate voltage is greater than a certain threshold. The three terminals of the device are the gate, drain and source. The drain is the terminal to which the current is applied and the source from where it is drawn. The gate is the controlling terminal and it is used to trigger the flow of current through the device.
The operating principle of HUFA75329D3 is as follows. The device starts operating as soon as the gate voltage (Vgs) is greater than the threshold value. When the gate voltage is applied, the voltage between the gate and the source (Vds) starts increasing and this in turn increases the flow of current through the device. The gate voltage can be increased to further increase the flow of current through the device. As the current increases, the voltage between the drain and source (Vds) starts decreasing. When the drain-source voltage reaches the pinch-off voltage, the device stops conducting current and the current starts to decrease.
HUFA75329D3 is an enhancement mode device that has a wide range of applications. It is easy to use and can be used for different kinds of applications. The device operates with high efficiency and low consumption, making it ideal for power management applications.
The specific data is subject to PDF, and the above content is for reference
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