Allicdata Part #: | HUFA75333S3ST-ND |
Manufacturer Part#: |
HUFA75333S3ST |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 55V 66A D2PAK |
More Detail: | N-Channel 55V 66A (Tc) 150W (Tc) Surface Mount D²P... |
DataSheet: | HUFA75333S3ST Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | UltraFET™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 55V |
Current - Continuous Drain (Id) @ 25°C: | 66A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 16 mOhm @ 66A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 85nC @ 20V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1300pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 150W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D²PAK (TO-263AB) |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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The HUFA75333S3ST is a modern MOSFET designed to handle high power density levels in medium- and high-power applications. The HUFA75333S3ST can handle up to 600 volts and offers a high-current ON-state output. It is also equipped with safe operating area (SOA) and temperature-independent parameters, making it suitable for a wide range of applications.
The HUFA75333S3ST is found in a variety of industries, including on-board switchmode power supplies, power line controllers, and high-speed power switching. It is also used in motor control, DC-DC converters, and motor drive applications. Some of its features make it a particularly useful device in compact and space-saving systems since it does not require a separate heat sink.
The HUFA75333S3ST is a type of field-effect transistor, known as an MOSFET. The FET operates by electronically controlling the width of a conducting channel between the source and drain terminals of the device using an electric field. It is a single-channel device. This means that it is constructed to have either one n-type channel or one p-type channel. The type of channel depends on which polarity of voltage is applied to the Gate terminal.
The working principle of the HUFA75333S3ST is a common one for MOSFETs. Applying a positive voltage to the Gate terminal causes a depletion region to form over the channel region, effectively turning the device \'OFF.\' When a negative voltage is applied to the Gate terminal, minority carriers are attracted by the Gate field, allowing current to pass through the channel. This turns the device \'ON\' as current can now travel between the Source and Drain terminals.
The current in the conducting channel may be further modulated by varying the gate voltage, creating either an enharmonic or linear control of the device. This allows the HUFA75333S3ST to be used as a variable resistor or an amplifier. It is also capable of switching rapidly in time-critical, high-power circuits such as motor drives, making it ideal for critical, high-speed switching applications.
The HUFA75333S3ST is also designed with safe operating area (SOA) and temperature-independent parameters. This helps mitigate heat dissipation by limiting the source-drain voltage and channel current to safe levels. This helps to protect the device from destruction in the event of an overload and helps to extend the life of the device.
The HUFA75333S3ST is an ideally suited device for medium and high power applications, such as on-board switchmode power supplies, power line controllers, and motor control systems. It is a high-voltage and high-current single-channel MOSFET, equipped with Safe Operating Area (SOA) and temperature-independent parameters. It also features fast switching performance, making it suitable for time-critical, high-power switching applications. All of these features make the HUFA75333S3ST an invaluable tool in modern-day power systems.
The specific data is subject to PDF, and the above content is for reference
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