HUFA75339S3ST

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HUFA75339S3ST is a type of single-level high voltage, low on resistance MOSFET. It is designed to be operated in high-side switching applications and is an ideal device for field effect transistor (FET) and metal-oxide-semiconductor FET (MOSFET) based switching applications. This MOSFET device is commonly used in various power distribution applications, such as DC to AC inverters, power conditioning systems, motor control, and uninterruptible power supplies.

The HUFA75339S3ST has an IC gate voltage of 3.2–12V, drain current of 93A, on resistance of only 2.5mΩ, and off resistance greater than 12MΩ. With a breakdown voltage of 600V, it is rated to be used in high power applications. It works on the principle that the MOSFET behaves like a variable resistor, with its current and voltage changing instantaneously in accordance with the gate voltage input.

When the MOSFET is used as a high side switch, the gate voltage needs to be kept true with respect to the source (ground), in order to ensure the FET is triggered correctly. This requires a floating gate-drive power supply, which is not possible to be embedded into the DC system. It also needs a realistic response time from the FET in order to be effective. The HUFA75339S3ST can provide this responsiveness, allowing for quick switching of the load.

HUFA75339S3ST can also be used as a low side switch, since its gate is capable of connecting to ground. This helps reduce the number of components needed for the power distribution design, since it does not need a complex protection circuit. Additionally, it can drive a much bigger load than other low-side FETs due to its high current capability.

In its regular operating mode, HUFA75339S3ST is in its on-state, where the MOSFET will be enhanced and act as an ideal switch. The P-channel of the MOSFET carries current from the source to the drain and the gate voltage determines the on and off state of the device. Once the correct gate voltage applied, the device is transitioned from on to off and vice versa, tracking the control voltage. When the HUFA75339S3ST is in the off-state, its internal body diode serves a protective function, absorbing all of the current passing through the gate.

Overall, HUFA75339S3ST is a highly efficient and reliable FET which is advantageous for a wide array of applications requiring high power switching. Compared to regular low-side FETs, it has a higher current capability, faster switching, better energy efficiency, and increased safety.

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