HUFA75343P3 Allicdata Electronics
Allicdata Part #:

HUFA75343P3-ND

Manufacturer Part#:

HUFA75343P3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 55V 75A TO-220AB
More Detail: N-Channel 55V 75A (Tc) 270W (Tc) Through Hole TO-2...
DataSheet: HUFA75343P3 datasheetHUFA75343P3 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 25V
FET Feature: --
Power Dissipation (Max): 270W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3
Series: UltraFET™
Packaging: Tube 
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 9 mOhm @ 75A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 205nC @ 20V
Vgs (Max): ±20V
Description

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HUFA75343P3 is a low-voltage, high-current n-channel MOSFET manufactured by Infineon Technologies. It is a highly versatile power switch that can be used in many applications. It offers high current-handling capacity, low on-state resistance, low gate threshold voltage, high load capacity and fast switching of power.

The HUFA75343P3 is well suited for automotive electronic applications due to its high power density and low voltage operation. Additionally, its fast switching capability makes it a suitable choice for applications such as motor control, power conversion, and power supplies.

The HUFA75343P3 is part of the TrenchEleotronics series of power MOSFETs from Infineon Technologies. This series is characterized by a low on-state resistance and low gate threshold voltage. It also offers a wide range of voltage and current capabilities, which allows it to be used in a variety of applications.

The HUFA75343P3 is a three-terminal electronic device constructed using metal–oxide–semiconductor technology (MOSFET). The three terminals are the source (S), the drain (D) and gate (G). The source is connected to the drain through a channel of n-type semiconductors. The voltage applied to the gate terminal can be used to control the current flowing through the channel. When the voltage applied to the gate is zero, the channel is fully open, allowing current to flow freely. When the voltage applied to the gate is above the threshold voltage, the channel is closed and no current will flow. This is known as the “off-state”.

The HUFA75343P3 power MOSFET is ideal for high-current and high-voltage applications. It has a low on-state resistance, which results in a high switching speed and low power loss. The device has a maximum blocking voltage of 600V, a drain-source voltage of 75V and a drain current rating of 14A. The maximum surge current rating is 375A.

The HUFA75343P3 is suited for a wide range of applications, including motor control systems, power conversion, and power supplies. It is also used in automotive and industrial applications. It can also be used for power protection and control, and for switching between reverse and forward states.

In conclusion, the HUFA75343P3 MOSFET is a low on-state resistance, fast switching, low-voltage, high-current power switch from Infineon Technologies. It offers a wide voltage and current capabilities, making it suitable for a variety of applications. It is especially suitable for automotive and industrial applications due to its high power density and low voltage operation.

The specific data is subject to PDF, and the above content is for reference

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