HUFA75344S3S Allicdata Electronics
Allicdata Part #:

HUFA75344S3S-ND

Manufacturer Part#:

HUFA75344S3S

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 55V 75A D2PAK
More Detail: N-Channel 55V 75A (Tc) 285W (Tc) Surface Mount D²P...
DataSheet: HUFA75344S3S datasheetHUFA75344S3S Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 8 mOhm @ 75A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 210nC @ 20V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 3200pF @ 25V
FET Feature: --
Power Dissipation (Max): 285W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D²PAK (TO-263AB)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Series: UltraFET™
Packaging: Tube 
Description

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HUFA75344S3S is a type of single Enhancement Mode insulated gate Field Effect Transistor (MOSFET). This device is used in a wide range of application fields. This article focuses on the application field and working principle of HUFA75344S3S.

Application Fields

HUFA75344S3S is a device that is capable of withstanding high voltage, current and high temperature. Therefore, it is suitable for high power applications. It is often used in solar power systems, high-voltage dc motor control, inverter systems and power supplies. It is also suitable for applications in the aviation, electric vehicle, power electronics and automotive industries.In addition, HUFA75344S3S is used to switch power in an electronically-controlled system. It can also be used for other general purpose applications, such as amplifiers and switching circuits.

Working Principle

The HUFA75344S3S is a type of single Enhancement Mode insulated gate Field Effect Transistor (MOSFET). It works on the principle of transistor principle. This device consists of three pins called source, gate and drain. The source pin is connected to the power supply and the gate terminal is connected to the lower power control signal. When a current flows through the control signal, the gate will cause a voltage drop that turns on the transistor. This will allow the current to flow from the source to the drain, thus controlling the power.The source also provides a path for the current to flow back to the gate terminal when the device is turned off. This prevents an uncontrolled current flow which could be hazardous for the device.The HUFA75344S3S can also be used to amplify signals. By using an integrated circuit, the device can be used to increase the voltage levels without sacrificing the current levels.

Conclusion

The HUFA75344S3S is a single Enhancement Mode insulated gate Field Effect Transistor (MOSFET). This device is used in a wide range of applications. It is suitable for applications in the aviation, electric vehicle, power electronics and automotive industries. Furthermore, it can be used to switch power in an electronically-controlled system, or to amplify signals through an integrated circuit.

The specific data is subject to PDF, and the above content is for reference

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