HUFA75344S3ST Allicdata Electronics
Allicdata Part #:

HUFA75344S3ST-ND

Manufacturer Part#:

HUFA75344S3ST

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 55V 75A D2PAK
More Detail: N-Channel 55V 75A (Tc) 285W (Tc) Surface Mount D²P...
DataSheet: HUFA75344S3ST datasheetHUFA75344S3ST Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: UltraFET™
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 8 mOhm @ 75A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 210nC @ 20V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 3200pF @ 25V
FET Feature: --
Power Dissipation (Max): 285W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D²PAK (TO-263AB)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Description

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HUFA75344S3ST is a new generation of insulated-gate bipolar transistor (IGBT) with high power density, low drive unit and high block voltage. It is widely used in a variety of applications and has become one of the most popular FETs. HUFA75344S3ST has excellent performance, including fast switching, low on-resistance and high current capability.

HUFA75344S3ST is a single FET. It is a type of unipolar transistor with a gate insulated from its channel by a layer of reverse-biased gate-oxide material. A single FET consists of three regions: the source, the drain and the channel. The gate is situated between the source and drain and controls the flow of current through the channel. When no gate voltage is applied, the FET behaves as an open switch. When a gate voltage is applied, the FET behaves as a closed switch, allowing current to flow.

The most common application of HUFA75344S3ST is in the controlled switching of electrical loads. Its fast switching time and low on-resistance make it ideal for power electronics applications such as motor control, switching power supply and UPS. Its high current capability makes it suitable for driving inductive loads such as motors and solenoids. It can also be used as a logic level switch or as an on/off switch for lighting systems.

HUFA75344S3ST works on a principle of voltage control. A positive voltage applied to the gate causes an electric field to be created between the gate and channel, which result in certain electrons being attracted out of the channel and creating a conductive path for current to flow. A negative voltage applied to the gate will reduce the electric field and cut off the current. By varying the voltage between the gate and source, the FET can be operated as a switch.

HUFA75344S3ST offers numerous advantages over traditional power switches. It has low drive current, allowing it to be used in place of much larger MOSFET or bipolar transistors in applications where space is a concern. It also offers fast switching time, low on-resistance and high current capacity, making it ideal for most power control applications. Furthermore, its single FET structure makes it highly reliable and less susceptible to damage than other FETs.

HUFA75344S3ST is widely used in a variety of applications, including motor control, switching power supplies and UPS. It is also used as a logic level switch or as an on/off switch for lighting applications. In addition, it is frequently used for telecommunication, medical imaging and semiconductor test systems.

The HUFA75344S3ST is a powerful and highly reliable single FET that is ideal for a multitude of applications. Its features, such as fast switching time, low on-resistance, and high current capacity make it an ideal device for most power control needs. Furthermore, its gate voltage operation makes it very easy to use, making it a popular choice for many applications.

The specific data is subject to PDF, and the above content is for reference

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