Allicdata Part #: | HUFA75345S3ST-ND |
Manufacturer Part#: |
HUFA75345S3ST |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 55V 75A D2PAK |
More Detail: | N-Channel 55V 75A (Tc) 325W (Tc) Surface Mount D²P... |
DataSheet: | HUFA75345S3ST Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | UltraFET™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 55V |
Current - Continuous Drain (Id) @ 25°C: | 75A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 7 mOhm @ 75A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 275nC @ 20V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 4000pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 325W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D²PAK (TO-263AB) |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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The HUFA75345S3ST is a single discrete surface mount N-Channel MOSFET offering different levels of performance that is suitable for high-power management, drive and level shifting in applications like medium-power switching, audio amplifiers, voltage regulator, protection circuits and interface circuits. The HUFA75345S3ST is a pinch-off type gate controlled device with a wide range of gate voltages allowing multiple applications. The HUFA75345S3ST offers excellent performance with its low position resistance and is designed to withstand high voltage levels in high frequency applications.
The HUFA75345S3ST is used to control the flow of electrical current between the source and the drain terminals of the MOSFET. This is done by modulating the voltage at the gate terminal, thus controlling the size of the depletion region between the source and the drain. This region can be thought of as a series resistor which is controlled by the voltage applied to the gate terminal of the MOSFET. The HUFA75345S3ST operates in an enhancement mode, meaning the gate needs to be made more positive than the source in order for it to conduct current. The source and drain current of the HUFA75345S3ST is proportional to the voltage at the gate terminal, making it suitable for analog control applications.
The HUFA75345S3ST is designed to have high voltage tolerance and low on-resistance. It has a low threshold voltage VGS(th) of 4.5V, allowing operation over a wide range of input voltages. The on-resistance is low, with RDS(on) of 3.5mOhms, making it suitable for high current applications, while the maximum drain source voltage VDSS of 350V makes it useful in high voltage circuits. The device is also designed to handle high frequency switching, with a maximum frequency (Fmax) of 3MHz. The HUFA75345S3ST also has a maximum gate to source voltage of 15V and a maximum gate leakage current of 5mA, making it suitable for high power analog control applications.
The HUFA75345S3ST is ideal for use in level shifting circuits, motor control, power converter designs and power switching applications. It can be used to control the flow of current between two terminals, such as in level shifting or voltage clamping circuits, or it can be used for switching off DC motors or other loads. It is also suitable for use in analog control and signal processing circuits, such as instrumentation amplifiers, active filters and other circuits. It can also be used in high frequency applications such as CD/DVD drives and other digital circuits.
In conclusion, the HUFA75345S3ST is a single discrete surface mount N-Channel MOSFET that offers excellent performance with its low position resistance and is designed to withstand high voltage levels in high frequency applications. Excellent performance, versatility and high voltage tolerance make it suitable for a wide range of applications, including level shifting, motor control, power converter designs, power switching, analog control and signal processing, and high frequency applications.
The specific data is subject to PDF, and the above content is for reference
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