HUFA75639S3ST Allicdata Electronics

HUFA75639S3ST Discrete Semiconductor Products

Allicdata Part #:

HUFA75639S3STTR-ND

Manufacturer Part#:

HUFA75639S3ST

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 100V 56A D2PAK
More Detail: N-Channel 100V 56A (Tc) 200W (Tc) Surface Mount D²...
DataSheet: HUFA75639S3ST datasheetHUFA75639S3ST Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D²PAK (TO-263AB)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 200W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
Series: Automotive, AEC-Q101, UltraFET™
Rds On (Max) @ Id, Vgs: 25 mOhm @ 56A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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Introduction

HUFA75639S3ST is a high power N-Channel enhancement mode MOSFET with 20 mΩ RDS(on). It provides a high efficiency, low on-state resistance and fast switching speed. With the circuit design capability and advanced processing technology, HUFA75639S3ST can meet many challenging application fields and working requirements. This paper intends to report the recent findings on the application field and working principle of HUFA75639S3ST.

Application Field

HUFA75639S3ST is capable of easily meeting the high input and output loads, which introduces multiple high switching speed operation. It is ideal for synchronous rectification boost converters, DC/DC converters, AC/DC converters, and Gate-Driver TL497X applications.The 20 mΩ low RDS(on) allows the load and circuit to draw less current from the power sources and further enhances the efficiency. Additionally, it can be applied to a wide range of automotive, industrial and consumer applications, such as backlight LED, AC/DC chargers, DC/DC converters and several types of PWM applications.

Working Principle

The main operation of the HUFA75639S3ST is based on the principle of MOSFET gates. A MOSFET gate is basically a three-terminal, insulated-gate field-effect transistor. It works on the principle that when a gate voltage is applied to the MOSFET gate, it will induce a negative charge on the gate and pull electrons away from the channels, thus allowing the current to flow through the channel. The gate voltage determines the amount of current that can flow through the MOSFET gate. With the MOSFET gate, HUFA75639S3ST is capable of operating with extremely low on-state resistance, which makes it suitable for applications in power supply, automotive and LED display.

Conclusion

In conclusion, HUFA75639S3ST is a high performance N-Channel enhancement mode MOSFET with 20 mΩ RDS(on). It is designed to meet challenging application fields and working requirements, enabling synchronous rectification boost converters, DC/DC converters, AC/DC converters, and other wide ranging automotive, industrial and consumer applications. It works on the principle of MOSFET gates, allowing a high switching speed and low on-state resistance. With its unique features and capability, HUFA75639S3ST is poised to be an industry leader in the power supply, automotive and LED display field.

The specific data is subject to PDF, and the above content is for reference

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