HUFA75639S3ST Discrete Semiconductor Products |
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Allicdata Part #: | HUFA75639S3STTR-ND |
Manufacturer Part#: |
HUFA75639S3ST |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 100V 56A D2PAK |
More Detail: | N-Channel 100V 56A (Tc) 200W (Tc) Surface Mount D²... |
DataSheet: | HUFA75639S3ST Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D²PAK (TO-263AB) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 200W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2000pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 130nC @ 10V |
Series: | Automotive, AEC-Q101, UltraFET™ |
Rds On (Max) @ Id, Vgs: | 25 mOhm @ 56A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 56A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Introduction
HUFA75639S3ST is a high power N-Channel enhancement mode MOSFET with 20 mΩ RDS(on). It provides a high efficiency, low on-state resistance and fast switching speed. With the circuit design capability and advanced processing technology, HUFA75639S3ST can meet many challenging application fields and working requirements. This paper intends to report the recent findings on the application field and working principle of HUFA75639S3ST.
Application Field
HUFA75639S3ST is capable of easily meeting the high input and output loads, which introduces multiple high switching speed operation. It is ideal for synchronous rectification boost converters, DC/DC converters, AC/DC converters, and Gate-Driver TL497X applications.The 20 mΩ low RDS(on) allows the load and circuit to draw less current from the power sources and further enhances the efficiency. Additionally, it can be applied to a wide range of automotive, industrial and consumer applications, such as backlight LED, AC/DC chargers, DC/DC converters and several types of PWM applications.
Working Principle
The main operation of the HUFA75639S3ST is based on the principle of MOSFET gates. A MOSFET gate is basically a three-terminal, insulated-gate field-effect transistor. It works on the principle that when a gate voltage is applied to the MOSFET gate, it will induce a negative charge on the gate and pull electrons away from the channels, thus allowing the current to flow through the channel. The gate voltage determines the amount of current that can flow through the MOSFET gate. With the MOSFET gate, HUFA75639S3ST is capable of operating with extremely low on-state resistance, which makes it suitable for applications in power supply, automotive and LED display.
Conclusion
In conclusion, HUFA75639S3ST is a high performance N-Channel enhancement mode MOSFET with 20 mΩ RDS(on). It is designed to meet challenging application fields and working requirements, enabling synchronous rectification boost converters, DC/DC converters, AC/DC converters, and other wide ranging automotive, industrial and consumer applications. It works on the principle of MOSFET gates, allowing a high switching speed and low on-state resistance. With its unique features and capability, HUFA75639S3ST is poised to be an industry leader in the power supply, automotive and LED display field.
The specific data is subject to PDF, and the above content is for reference
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