Allicdata Part #: | HUFA75842S3S-ND |
Manufacturer Part#: |
HUFA75842S3S |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 150V 43A D2PAK |
More Detail: | N-Channel 150V 43A (Tc) 230W (Tc) Surface Mount D²... |
DataSheet: | HUFA75842S3S Datasheet/PDF |
Quantity: | 1000 |
Series: | UltraFET™ |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 150V |
Current - Continuous Drain (Id) @ 25°C: | 43A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 42 mOhm @ 43A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 175nC @ 20V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 2730pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 230W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D²PAK (TO-263AB) |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
HUFA75842S3s epitaxial N-channel silicon planar micro-field effect transistors are designed for high frequency high voltage power switching applications. Their advanced technology and superior characteristics enable them to exceed many current high-performance requirements. It is especially suited for applications such as power inverters, industrial switch mode power supplies, high-speed switching relays, and high-voltage switches.
The HUFA75842S3S features excellent switching characteristics combined with low on-resistance. The on-state resistance is optimized for low gate-threshold voltage and ultrafast switching in order to maximize power efficiency.
HUFA75842S3S transistors feature a monolithic planar construction, built on epitaxial N-channel silicon, offering excellent stability and high switching speeds. The on-resistance and gate-threshold are both optimized for low power consumption, high frequency operation, and low inter-device switching variation.
The HUFA75842S3S has a single-feed gate structure with two gate pins: Gate1 (G1) and Gate2 (G2). The two gate pins of the HUFA75842S3S can be operated independently, allowing for higher switching speeds and greater power efficiency than other single-gate FETs.
The HUFA75842S3S utilizes an advanced technology process for superior switching performance over a wide range of voltages and frequencies. By utilizing a unique double-stage lateral diffusion process, the devices are able to offer superior switching performance and low on-state resistance.
The HUFA75842S3S is also designed with an improved layout for reduced circuit impedance and noise. The device includes an intrinsic diode from the drain to the source, which can be utilized for high-speed reverse recovery for transient voltage spike suppression.
The HUFA75842S3S is designed to operate in high frequency applications. Its fast switching speed makes it ideal for switch mode power supplies, motor drives, and other high frequency circuits. It is also ideal for high voltage applications, such as motor controllers, solenoid drivers, and power inverters.
The HUFA75842S3S is a robust and reliable high speed FET that meets the highest performance requirements. It is especially suitable for applications where reliability, power savings, and high performance are essential. It is available in a variety of packages to meet the customer’s desired application.
The specific data is subject to PDF, and the above content is for reference
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