HUFA75645P3

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The HUFA75645P3 is a single N-channel insulated gate field effect transistor (FET). It is widely used in switching and amplifier applications. It is capable of working in a wide range of temperatures and operates at a wide voltage range. In addition, it offers excellent operating characteristics, making it an ideal choice for a variety of applications.

The HUFA75645P3 is a single pole, N-channel MOSFET with a low gate source voltage. It has a source gate voltage capacity of 33V, and an on-state drain current (ID) capacity of 66A. It is available in a thermally enhanced PowerPAK®1212-8 package, which helps to maximize power dissipation. The resistive thermal impedance of this device is 5.4mΩ-C/W and its internal circuit protects it from overheating.

The operating principle behind the HUFA75645P3 is very simple. This MOSFET is designed for operation with a single gate voltage. When the gate voltage is zero, the FET is in an off-state, meaning no current passes from its drain to its source. When the gate voltage is increased above its threshold value, the device enters an on-state, allowing current to pass through it.

The HUFA75645P3 is a high performance MOSFET that is suitable for use in a wide variety of applications. It can be used in transistor radio circuits, logic circuits, high-speed switching circuits, amplifier stages and power supplies. It can also be used in automotive electronics, consumer electronics, high-end audio systems, industrial equipment and medical equipment.

The HUFA75645P3 is reliable and efficient, providing excellent performance. Its low voltage and high current ratings make it an ideal choice for a variety of applications. This device is capable of operating across a wide range of temperatures, and its internal circuit protects it from overheating. In short, the HUFA75645P3 is a versatile and reliable device that is suitable for a variety of uses.

The specific data is subject to PDF, and the above content is for reference