HUFA75852G3-F085

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HUFA75852G3-F085 is a silicon n-channel enhancement-mode field-effect transistor with UltraFET technology. It has an efficient power dissipation of 5.8W and a precise tolerence of VGs(th) ± 10mV.

The HUFA75852G3-F085 is designed to provide drive currents up to 11A and is applicable in various advanced applications. It features an extended HIGH ( drain to source voltage) of −40 V which makes it suitable for advanced portable applications, such as Wireless Communications and Battery Management Applications.

Applications

HUFA75852G3-F085 is used in applications such as:

• Mobile Handsets
• White Goods
• Industrial Controllers
• Instrumentation Amplifiers
• Level shifters
• Telecommunications

Its design flexibility allows it to find applications in a variety of markets including consumer electronics, industrial, electronic motor drive, medical, and automotive.

Working Principle

The operation of the HUFA75852G3-F085 is based on a metal oxide semiconductor field-effect transistor (MOSFET). The MOSFET is a voltage-controlled device which is capable of amplifying or switching electronic signals. It consists of two terminals, source and drain. An oxide layer at the gate side of the device acts as the gate dielectric. When a voltage is applied to the gate, charge carriers in the form of electrons and holes are attracted and repelled from the gate to the source and drain, respectively. This creates a strong electric field at the gate, which allows the HUFA75852G3-F085 to amplify or switch very small voltages, making it ideal for applications that require high speed switching or a high level of sensitivity.

This device is enabled by the UltraFET technology which integrates semiconductor processes, thermal management and packaging technology to help reduce the elextric resistance and capacitance, improve power dissipation and to reduce on-resistance. It also helps in providing a weather-proof, scratch and tear resistant surface.

Conclusion

HUFA75852G3-F085 is a silicon n-channel enhancement-mode MOS field-effect transistor which has an efficient power dissipation of 5.8W and an excellent tolerence of VGs(th) ± 10mV. This device is suitable for applications such as Mobile Handsets, White Goods, Telecommunication, Industrial Controllers and Instrumentation Amplifiers due to its high tolerance and extended HIGH ( drain to source voltage).

The excellent performance of the HUFA75852G3-F085 is mainly enabled by its UltraFET technology which helps reduce the electric resistance and capacitance, improve power dissipation and reduce on-resistance. Ultimately, the HUFA75852G3-F085 proves to be a very efficient and reliable device for various applications that require high speed switching or a high level of sensitivity.

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