HUFA76409D3ST Discrete Semiconductor Products |
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Allicdata Part #: | HUFA76409D3STCT-ND |
Manufacturer Part#: |
HUFA76409D3ST |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 18A DPAK |
More Detail: | N-Channel 60V 18A (Tc) 49W (Tc) Surface Mount TO-2... |
DataSheet: | HUFA76409D3ST Datasheet/PDF |
Quantity: | 6849 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | TO-252AA |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 49W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 485pF @ 25V |
Vgs (Max): | ±16V |
Gate Charge (Qg) (Max) @ Vgs: | 15nC @ 10V |
Series: | Automotive, AEC-Q101, UltraFET™ |
Rds On (Max) @ Id, Vgs: | 63 mOhm @ 18A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 18A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Cut Tape (CT) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
HUFA76409D3ST is a highly advanced type of field effect transistor (FET) designed with three terminals, a gate, drain, and source all connected at different points on the same semiconductor die, making it a ‘Single’ FET. It is part of the Insulated Gate Bipolar Transistor (IGBT) family of devices and is suitable for use in high power switching applications.
The HUFA76409D3ST is used in a variety of industries because of its impressive technical specifications. It has a drain-to-source voltage of up to 400V and a drain current of up to 40A. This makes it perfect for use in applications where high power is required. It is also a great choice for applications where designers need to include a power element but also keep the required size small. The HUFA76409D3ST requires very little space for its installation and can fit comfortably in even the most space-restricted areas.
The working principle of the HUFA76409D3ST is based on the junction field effect transistor (JFET). The JFET works by using the electric field created by the gate voltage to control the current flow between the drain and source of the device. By adjusting the voltage of the gate, the amount of current flowing between the drain and source can be controlled.
In addition to its impressive technical specifications, the HUFA76409D3ST is also notable for its excellent thermal resistance. Thanks to its epoxy-molded package, the HUFA76409D3ST can handle temperatures ranging from -55°C to +150°C. This makes it perfect for applications where continuous high-temperature operation is required. It also has a maximum operating frequency of up to 375 kHz, which further increases the flexibility of its use.
The HUFA76409D3ST is suitable for a wide range of applications. It can be used in high power switching circuits, such as automotive, LED controllers, and UPS systems. In these applications, the HUFA76409D3ST can be used to regulate the flow of current. It is also suitable for applications such as power supply units and voltage regulators; in these scenarios, the HUFA76409D3ST can be used to control the output voltage levels.
The HUFA76409D3ST is a very reliable and robust device. It comes with high surge current protection, ESD protection up to 4KV, and has a very low on-resistance of less than 0.2 ohms. This makes it suitable for a wide range of applications, from automotive to industrial and much more.
The HUFA76409D3ST is an advanced type of FET, with impressive technical specifications and excellent reliability. Its high power and thermal performance makes it ideal for a range of applications, with its main use being in high power switching circuits.
The specific data is subject to PDF, and the above content is for reference
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