HUFA76429D3ST-F085 Discrete Semiconductor Products |
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Allicdata Part #: | HUFA76429D3ST-F085TR-ND |
Manufacturer Part#: |
HUFA76429D3ST-F085 |
Price: | $ 0.46 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 20A DPAK |
More Detail: | N-Channel 60V 20A (Tc) 110W (Tc) Surface Mount TO-... |
DataSheet: | HUFA76429D3ST-F085 Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 0.41312 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | TO-252AA |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 110W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1480pF @ 25V |
Vgs (Max): | ±16V |
Gate Charge (Qg) (Max) @ Vgs: | 46nC @ 10V |
Series: | UltraFET™ |
Rds On (Max) @ Id, Vgs: | 23 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 20A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The HUFA76429D3ST-F085 is a power MOSFET fabricated with a silicon gate CMOS technology. It is optimized as a high-performance low-voltage load switch with a fast turn-on, low-on-resistance and high breakdown voltage capability. As such, it is a popular choice for many circuit applications where high current and low voltage requirements are necessary.
The HUFA76429D3ST-F085 is a high-performance N-channel enhancement mode MOSFET that is generally suitable for use in battery-operated portable applications. The device is typically available in a 7.5mm× 5.6mm Leaded Surface-Mount-Package (L-SOP).
Typical applications for this device include power supplies, audio amplifiers, and other circuits requiring high device voltage and current capabilities. This device is also frequently used in automotive applications, such as the powertrain control module (PCM), which uses the device to route and control power in the body control module.
The main feature of the HUFA76429D3ST-F085 is its ability to switch large currents at low voltage drops. This is due to its on-resistance value, which is typically matched to the duty cycle of the application, as well as its flexibility in various connections. The device is constantly improved to achieve the lowest on-resistance value and highest gain.
The principle of operation for the HUFA76429D3ST-F085 is similar to that of the field effect transistor (FET). A gate voltage is applied to a semiconductor channel between the drain and source electrodes. This voltage creates an electric field, allowing for current to flow through the device when the applied voltage exceeds the threshold voltage.
The threshold voltage is determined by the device’s gate capacitance, operational temperature, and doping profiles of the semiconductor channel. This ensures that the current can be regulated through the semiconductor channel, allowing users to efficiently control the current in their device.
In addition to the previously mentioned features, the HUFA76429D3ST-F085 features robust ability to handle high-powered switching applications. This is enabled by its low gate charge, which enables the device to be used in high-toggle frequency applications. It also has a low-leakage current across the drain-source channel, which reduces the amount of power dissipated by the uses of the device.
The HUFA76429D3ST-F085 is a great choice for applications that require a low voltage drop, low-on-resistance, and fast switching. Its flexible connection and high on-resistance makes it an ideal choice for a variety of switching applications, such as audio amplifiers and power supplies.
The specific data is subject to PDF, and the above content is for reference
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