Allicdata Part #: | HUFA76429P3-ND |
Manufacturer Part#: |
HUFA76429P3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 47A TO-220AB |
More Detail: | N-Channel 60V 47A (Tc) 110W (Tc) Through Hole TO-2... |
DataSheet: | HUFA76429P3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 110W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1480pF @ 25V |
Vgs (Max): | ±16V |
Gate Charge (Qg) (Max) @ Vgs: | 46nC @ 10V |
Series: | UltraFET™ |
Rds On (Max) @ Id, Vgs: | 22 mOhm @ 47A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 47A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
HUFA76429P3 is a Field Effect Transistor (FET) with a single Drain on the top layer and single Gate on the bottom layer. The transistor is made up of a silicon substrate, an oxide layer and a metal gate. This transistor is used in high-efficiency power transmission, switching and amplification. The primary purpose of the transistor is to provide a robust and highly efficient pathway for transferring power from one device to another.
The unique feature of the HUFA76429P3 is the high transconductance or current that can be transmitted through the transistor without creating heat or introducing noise. This low noise and low heat feature ensure that the transistor remains cool and stable even under high power applications. Because of this, the transistor can be used in high-power switching, signal amplification, and transmission devices.
The main advantage of the HUFA76429P3 is its low profile structure, which allows it to fit into tight spaces. Its small package allows it to be used in a variety of applications ranging from consumer electronics to automotive systems. Moreover, its low thermal resistance ensures that it can handle high current and power densities in a power-efficient manner.
The working principle of the HUFA76429P3 largely depends upon solid insulation between the gate and the drain of the transistor. The insulation helps create an insulation barrier between the two so that no current can pass between them. However, when a voltage difference is applied between the drain and the gate, the insulation breaks down and produces a current (that is, a flow of electrons).
This current then modifies the electrical resistance of the channel between the source and the drain. The voltage and current across the drain cause a change in the transistor\'s conductivity from high flow (ON) to low flow (OFF). In other words, the HUFA76429P3 transistor is basically a switch or an amplifier.
In summary, the HUFA76429P3 is a single-gate FET with a high transconductance that is suitable for high-efficiency power transmission, switching and signal amplification. Its low thermal resistance ensures it can handle large current and power densities, and its small package allows it to fit into tight spaces. Furthermore, its low-noise and low-heat operation ensure that the transistor remains cool and reliable even in the harshest conditions.
The specific data is subject to PDF, and the above content is for reference
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