Allicdata Part #: | HUFA76443S3S-ND |
Manufacturer Part#: |
HUFA76443S3S |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 75A D2PAK |
More Detail: | N-Channel 60V 75A (Tc) 260W (Tc) Surface Mount D²P... |
DataSheet: | HUFA76443S3S Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | UltraFET™ |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 75A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 8 mOhm @ 75A, 10V |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 129nC @ 10V |
Vgs (Max): | ±16V |
Input Capacitance (Ciss) (Max) @ Vds: | 4115pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 260W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D²PAK (TO-263AB) |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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The HUFA76443S3S is a single N-Channel enhancement mode MOSFET that belongs to a larger family of such devices. It is widely used in applications where fast switching of high current and low gate drive is desired. This type of transistor is commonly used in switching power supplies, portable electronics, automotive systems, home appliances, motor control and the Industrial sector.
The HUFA76443S3S is a Vishay Siliconix device, specifically of their Advanced Power MOSFETs family. It is a single N-channel enhancement type MOSFET that offers low terminal capacitance and low input capacitance, providing fast switching speed, high frequency response, and low input capacitance. These features make the HUFA76443S3S ideal for many applications.
The HUFA76443S3S is constructed with a planar double diffusion MOS (DMOS) transistor process technology. This technology has two drain sources, two bit lines and two transistors. The drain and sources are connected to the two bit lines, while the two transistors are connected together by the three layer metal n+ layer. This three layer structure enables the device to maintain low input capacitance and high speed switching.
The HUFA76443S3S works through a simple working principle. When there is no signal applied to the gate, the source is at ground potential and there is no current flow between the source and the drain. However, when a voltage is applied to the gate, the channel will invert, allowing current to flow from the source to the drain. This current flow is then regulated by the drain-source voltage and will increase or decrease depending on the voltage applied to the gate.
The HUFA76443S3S is ideal for a range of applications, including switching power supplies, automotive systems, portable electronics, home appliances, motor control, and industrial applications. It provides high current, low gate drive, and fast switching with low input capacitance, making it suitable for these applications.
In summary, the HUFA76443S3S is a single N-Channel enhancement mode MOSFET that is ideal for applications that require high current and fast switching. It is constructed with a planar double diffusion MOS (DMOS) transistor process, which offers low input capacitance and fast switching speed. The HUFA76443S3S works through a simple working principle that allows current to flow in the channel when a voltage is applied to the gate. The HUFA76443S3S is suitable for a range of applications, including but not limited to switching power supplies, automotive systems, portable electronics, home appliances, motor control, and industrial applications.
The specific data is subject to PDF, and the above content is for reference
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