HUFA76639P3

Series:	UltraFET™
Packaging:	Tube
Part Status:	Obsolete
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	100V
Current - Continuous Drain (Id) @ 25°C:	51A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	26 mOhm @ 51A, 10V
Vgs(th) (Max) @ Id:	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	86nC @ 10V
Vgs (Max):	±16V
Input Capacitance (Ciss) (Max) @ Vds:	2400pF @ 25V
FET Feature:	--
Power Dissipation (Max):	180W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	TO-220AB
Package / Case:	TO-220-3

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The HUFA76639P3 is one of the most popular transistors in the field of FETs, MOSFETs and single transistors. This device is capable of handling high power applications and is ideal for use in power management and audio circuits. In this article, we will explore the application field and working principle of the HUFA76639P3.The HUFA76639P3 is a N-Channel Enhancement Mode Power MOSFET that is commonly used in power management and audio circuits. It is capable of handling high current applications and is ideal for use in systems that require both low and high current levels. This allows for greater flexibility and better performance in power systems.The HUFA76639P3 is designed for high current applications which can range from low to high power ratings. It is designed to provide high efficiency and low power dissipation. The device is also capable of generating high frequency signals for switching and can also be utilized in high voltage applications as well as in high speed digital applications.The HUFA76639P3 features a dielectric oxide gate oxide transistor (DMOSFET) that is 8.0 mm in length and has a gate length of 0.495 mm. It is capable of operating with a 16 volt gate to source voltage, a 15 volt gate to drain voltage, and a 20 V drain to source voltage. In addition, it requires a gate withstand voltage of 20 volts and is capable of handling up to 65 watts of power.The HUFA76639P3 works on the principle of a depletion-mode MOSFET. This principle is widely applicable to audio circuits, power management circuits, and other types of analog applications. With depletion mode MOSFETs, current is allowed to flow through the device when a voltage is applied across the gate and source. The current will then be depleted due to the gate to drain leakage.When the voltage across the gate and source is increased, the current is increased. This allows for the HUFA76639P3 to be used in high power applications. In addition, the increased voltage can be used to provide higher current levels in a power system or to reduce the current levels in a digital system.The HUFA76639P3 is capable of providing excellent performance for power systems, audio circuits, analog devices, and other digital applications. It is ideal for use in applications where high power is needed and where the device needs to work at low power levels. This makes it ideal for power management systems, audio circuits, and analog devices.The HUFA76639P3 is a reliable and efficient power MOSFET that can provide excellent performance in both low and high power applications. Furthermore, the high frequency signals generated by this device can be utilized in high speed digital applications. Overall, the HUFA76639P3 is a great choice for use in a variety of power system and audio applications.

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