| Allicdata Part #: | HUFA76639S3S-ND |
| Manufacturer Part#: |
HUFA76639S3S |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 100V 50A D2PAK |
| More Detail: | N-Channel 100V 51A (Tc) 180W (Tc) Surface Mount D²... |
| DataSheet: |  HUFA76639S3S Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Current - Continuous Drain (Id) @ 25°C: | 51A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs: | 26 mOhm @ 51A, 10V |
| Vgs(th) (Max) @ Id: | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 86nC @ 10V |
| Vgs (Max): | ±16V |
| Input Capacitance (Ciss) (Max) @ Vds: | 2400pF @ 25V |
| FET Feature: | -- |
| Power Dissipation (Max): | 180W (Tc) |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | D²PAK (TO-263AB) |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Series: | UltraFET™ |
| Packaging: | Tube |
| Part Status: | Obsolete |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 100V |
Description
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The HUFA76639S3S is a single-gated enhancement-mode field-effect transistor (FET). It is mainly used in power-amps for applications like A/D Converters and data acquisition systems. This transistor is an important part of electronic equipment and systems used in the industries like the aerospace, defense, industrial and communications within these areas.The HUFA76639S3S has a built-in gate oxide layer which is designed to protect the device from high-voltage breakdowns. The major function of the gate oxide layer is to block the depletion mode of the underlying silicon structure, thereby allowing for an enhancement mode of operation. By carefully controlling the voltage applied across the gate oxide layer, the user can control the current that flows through the device.The drain source voltage (VDS) of the HUFA76639S3S can be between 7V and 30V, and its drain current (ID) can vary from 7A to 30A. The operating temperature range is between - 55°C to 175°C. It features a broad range of drain current and drain to source voltage ratios. It also has a maximum voltage value of 400V, and a breakdown voltage of 45V.The main working principle of a HUFA76639S3S field-effect transistor is similar to that of a bipolar junction transistor (BJT). When the gate voltage is higher than the source voltage, a current starts to pass between the source and the drain. This current is known as the saturation current. The amount of current passing through is proportional to the gate voltage and its magnitude is controlled by the gate voltage.When the gate voltage is less than the source voltage, the transistor can be operated in a linear region. In this region, the drain current is proportional to the gate voltage. This linear operating region is useful for the applications requiring a low quiescent current and a low voltage gain such as voltage regulators and power converters.Moreover, the gate to source capacitance and the total gate capacitance of the HUFA76639S3S is an important factor to consider as it determines the speed of the device. It is also necessary to take into account the drain-source resistance and the gate-source resistance when considering the capabilities of the device.The HUFA76639S3S single-gated field-effect transistor is a highly versatile device which is capable of meeting the requirements of a broad range of applications. Its features, such as the gate oxide layer and the wide voltage and temperature range of operation, make it a reliable and versatile device. Furthermore, the integrated gate circuitry allows for high switching speeds as well as a low quiescent current, making it an ideal choice for applications such as power-amps, voltage regulators and data acquisition systems.
The specific data is subject to PDF, and the above content is for reference
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