IPB120N06N G

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

IPB120N06N G is a type of field-effect transistor (FET) manufactured by Infineon that exhibits enhanced performance for use in switching applications. It is a single n-channel MOSFET, with a low on-resistance and low gate charge, featuring high speed switching and excellent performance even at low drive and operating voltages. This makes it ideal for a variety of applications, including power switching, motor control, and inverter applications. In this article, we will discuss the application field and working principle of this device.

Application Field

The IPB120N06N G is a versatile power device that can be used in many different applications. Generally, it is used in applications requiring high speed switching, high efficiency, and low on-resistance. The device can handle up to 100V drain-to-source voltages and up to 200A drain-to-source currents, which makes it an ideal choice for applications demanding high power ratings. Its low gate charge ensures low switching losses, making it perfect for motor control and gate drive circuits. It is also suitable for a wide range of applications where voltage control is needed, including inverter applications, frequency converters, and solar power inverters. In addition, the device is ideal for power conversion applications, where high speed switching and precise control is required. This includes AC/DC and DC/DC converters, and power factor correction circuits.

Working Principle

The IPB120N06N G is a single n-channel MOSFET, meaning it has a single conducting channel between its gates and drains. When a voltage is applied to the gate-source of the device, it causes a conductive channel to form between its source and drain, allowing current to flow. The resistance of the conductive channel between the source and drain can be controlled by varying the voltage applied to the device’s gate-source. This is known as voltage control, and is essential for applications requiring precise control over current flow. The device also has an on-resistance, which is the resistance of its conductive channel at its highest level. The device’s low on-resistance ensures it will not dissipate too much power while in operation.

The device also has a low gate charge, meaning it will not consume too much power when switching. The low gate charge ensures the device’s switching losses are minimized, allowing it to operate at high efficiency. This makes it a good choice for applications where power efficiency is important.

Conclusion

The IPB120N06N G is a versatile field-effect transistor (FET) manufactured by Infineon that exhibits enhanced performance for use in switching applications. It is a single n-channel MOSFET, with a low on-resistance and low gate charge, making it ideal for a variety of applications, including power switching, motor control, and inverter applications. The device’s low on-resistance ensures it will not dissipate too much power while in operation, and its low gate charge ensures its switching losses are minimized, allowing it to operate at high efficiency.

The specific data is subject to PDF, and the above content is for reference