IRF7311TRPBF Discrete Semiconductor Products

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The IRF7311TRPBF is a complementary metal oxide semiconductor (CMOS) N- and P-channel 8-pin metal oxide semiconductor (MOSFET) array that was designed to provide improved logic level performance, higher speed, and lower on-resistance than its predecessor, the IRF7311. This device contains two N-channel and two P-channel power MOSFETs as well as integrated gate protection on each of the four MOSFET channels. The IRF7311TRPBF has a Vds of 180 volts, a maximum drain current of 3.2 A, a gate-source voltage of +/-20V and an on-resistance of 140mΩ. Additionally, this device has a low gate input capacitance of 40pF and low gate-source capacitance of 65pF.

The IRF7311TRPBF 8-pin MOSFET array is one of the most popular logic level interfacings in the market today. This device is often used in applications ranging from industrial, automotive, telecommunications, and consumer electronics. The IRF7311TRPBF is particularly useful in applications that require a low on-resistance, such as motor control, switching power supplies, and high speed motor drivers. The device\'s low gate input capacitance and low gate-source capacitance also offers the device some unique advantages in the audio frequency (AF) space.

The IRF7311TRPBF operates by turning on the internal N- and P-channel MOSFETs through the gate-source voltage provided. The gate-source voltage then forms an electric field that controls the conduction between the two terminals, source and drain. When the gate-source voltage is high, the electric field exerts a pull on the electrons in the channel, causing them to move across the channel. This creates a low on-resistance line between the source and the drain and allows current to flow.

The IRF7311TRPBF is also designed to have a wide range of features and specifications to provide its users with much flexibility. Its gate-source voltage can be configured between +/-20V and it is rated for a drain voltage of up to 180V. Additionally, the on-resistance is only 140mΩ, which makes it an ideal choice for applications where efficiency and power savings are key. Another beneficial feature is its integrated gate protection, which helps protect the gate from high voltages and static electricity from static discharges.

In addition to its technical features, the IRF7311TRPBF 8-pin MOSFET array offers several other benefits. It is a cost-effective solution due to its low-cost components and low manufacturing costs. It also has a wide operating temperature range, making it suitable for many applications in industries such as automotive, industrial and consumer electronics. Furthermore, the device has a high packing density, allowing it to fit in tight spaces, allowing for greater design flexibility.

In summary, the IRF7311TRPBF is an 8-pin MOSFET array designed to provide logic level performance, higher speed, and lower on-resistance than other similar parts. It is popularly used in various applications from industrial, automotive, telecommunications, and consumer electronics, due to its low cost, high packing density, wide operating temperature range, and integrated gate protection. It operates by turning on internal N- and P-channel MOSFETs through the gate-source voltage to create a low on-resistance path between the source and the drain, allowing current to flow.

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