
Allicdata Part #: | IRF7807ZTR-ND |
Manufacturer Part#: |
IRF7807ZTR |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 30V 11A 8-SOIC |
More Detail: | N-Channel 30V 11A (Ta) 2.5W (Ta) Surface Mount 8-S... |
DataSheet: | ![]() |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.25V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 770pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 11nC @ 4.5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 13.8 mOhm @ 11A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 11A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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IRF7807ZTR is a very common field-effect transistor (FET). It belongs to the single junction FET which is a type of device that has the ability to act as a variable resistor and is used for many different types of applications. This particular type of transistor has some unique characteristics that have made it useful for purposes such as switching, current control, voltage regulation, power supply control, and more. In this article, we will discuss the application field and working principle of the IRF7807ZTR.
In terms of applications, the IRF7807ZTR can be used in a variety of ways. It is often used in RF and microwave circuits as a switch and is frequently used as a current limiter in power supplies. Additionally, the IRF7807ZTR can be used as a voltage regulator, as a thermal protection device, and as a power source for low power applications. It is also used in analog circuits to adjust the gain of an amplifier. Finally, the IRF7807ZTR is sometimes used in automotive applications as a protection device.
In regard to its working principle, the IRF7807ZTR is a field effect transistor that operates by using a channel of n-type and p-type semiconductor material. This structure is called an n-p junction. The IRF7807ZTR uses a reverse biased gate to control the current flow between the source and the drain. As the voltage of the gate is increased, the resistance of the channel decreases, allowing more current to flow through it. This effect is called the field effect and allows the IRF7807ZTR to act as a variable resistor, allowing the user to adjust the voltage and current of the device.
The IRF7807ZTR also works as a thermal protection device as it can absorb excess power that is generated within the circuit. This prevents the circuit from being exposed to thermal runaway and, in turn, allows the circuit to be maintained safely. Additionally, the IRF7807ZTR is able to provide excellent voltage regulation and provides very linear current control, allowing it to be used in many analog circuits.
Overall, the IRF7807ZTR is a versatile device that can be used for many different applications. It can act as a switch, a current limiter, a thermal protection device, a voltage regulator, and a power source for low-power applications. Additionally, its field effect design allows it to act as a variable resistor, allowing the user to adjust the voltage and current output. Because of these features, the IRF7807ZTR is a very popular device and can be found in many different kinds of circuits.
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