Allicdata Part #: | IRF7754GTRPBFTR-ND |
Manufacturer Part#: |
IRF7754GTRPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET 2P-CH 12V 5.5A 8TSSOP |
More Detail: | Mosfet Array 2 P-Channel (Dual) 12V 5.5A 1W Surfac... |
DataSheet: | IRF7754GTRPBF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 900mV @ 250µA |
Base Part Number: | IRF7754GPBF |
Supplier Device Package: | 8-TSSOP |
Package / Case: | 8-TSSOP (0.173", 4.40mm Width) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power - Max: | 1W |
Input Capacitance (Ciss) (Max) @ Vds: | 1984pF @ 6V |
Gate Charge (Qg) (Max) @ Vgs: | 22nC @ 4.5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 25 mOhm @ 5.4A, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 5.5A |
Drain to Source Voltage (Vdss): | 12V |
FET Feature: | Logic Level Gate |
FET Type: | 2 P-Channel (Dual) |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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IRF7754GTRPBF is an advanced high power MOSFET transistors array device. The array consists of two N-channel MOSFETs set in series and can handle up to 28A continuous current and up to 48A peak current at 57V. It has all the features like a low input capacitance, low of-state voltage, very low gates-source capacitance, extremely fast switching speed, and good cluster rejection. This device is used in a wide range of applications, including voltage regulator circuits, switching amplifiers, high-side switch device, and power supply solutions. This device also has great potential to be used in other power semiconductor applications.
The gate of the MOSFET is the most important part and it must be driven with proper voltage to turn ON or OFF the device. The gate-source voltage of an IRF7754GTRPBF should usually be between -20V and +12V. The gate-drain voltage should be between -3V and +12V. When the voltage is applied to the gate, the electric fields between the electrodes pull the electrons and holes from source to drain, thus providing a low-resistance current path. This conduction is what allows the transistor to switch ON/OFF the load current. The ON/OFF switching is done by modifying the gate-source voltage with the help of a digital signal, analog signal or a combination of both.
For applications requiring extremely fast switching speeds, the IRF7754GTRPBF is ideal due to its very low gate-source capacitance. Its low input capacitance also offers excellent slew-rate control, making it an ideal candidate for high frequency amplifiers and memory cells. The device also features a very low of-state voltage, making it suitable for switching in medium-voltage systems. Additionally, the device has very good thermal stability, which is especially important in high power applications.
The IRF7754GTRPBF has a wide range of power management circuit applications. It can be used for circuits such as over-voltage protection, current limiting, and ESD protection. It can also be used as a high-side switch device in a DC-DC converter, as well as in a voltage regulator circuit. This device can also be used in high-power logic circuit applications, such as driving a high power LED. It is also used in automotive grade applications and power conversion circuits.
Overall, the IRF7754GTRPBF is an advanced, reliable, and efficient MOSFET array device, which is suitable for a wide range of applications. It has great potential to be used in other power semiconductor applications. Its low input capacitance, low gate-source capacitance, low of-state voltage and high power capabilities make it an ideal choice for many power management and circuit applications.
The specific data is subject to PDF, and the above content is for reference
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