IRF7809AVTRPBF

The IRF7809AVTRPBF is a single N-Channel MOSFET designed for high current and low voltage operation.

The device features a ESD network with low input capacitance, a low on-state resistance, and a low gate-to-source voltage drop. It is designed to provide reliable operation in a wide range of applications that require both low resistance and low input capacitance.

The IRF7809AVTRPBF is ideal for providing power to high current devices while providing tight control over output current. It can be used in a variety of applications including automotive, industrial, and consumer applications. These applications can range from low voltage, high current DC motors, to larger DC-DC converter systems.

The IRF7809AVTRPBF is a N-Channel MOSFET with an on-state resistance of about 0.2 Ω and an input capacitance of about 7 pF. Its drain-to-source voltage (V_DS) rating is 100V and its continuous drain current (I_D) rating is 8A. It has a maximum power dissipation of 140W. The device features a V_GS rating of 10V, which is ideal for providing precise control over the current.

The IRF7809AVTRPBF’s working principle is based on charge conduction. In operation, electric charge is converted into a flow of electrons, which are conducted across the MOSFET\'s gate-source terminal. By controlling the gate-source voltage, the current through the device can be precisely regulated. This makes the MOSFET an ideal solution for applications that require accurate current control.

The IRF7809AVTRPBF is well suited for applications that require both a high current capacity and a low-voltage operation. It is an ideal solution for automotive, industrial, and consumer applications that require precise current control. The device’s low input capacitance, low on-state resistance, and low gate-to-source voltage drop make it ideal for providing reliable operation in a variety of applications.