IRF7555TRPBF Allicdata Electronics
Allicdata Part #:

IRF7555TRPBFTR-ND

Manufacturer Part#:

IRF7555TRPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET 2P-CH 20V 4.3A MICRO8
More Detail: Mosfet Array 2 P-Channel (Dual) 20V 4.3A 1.25W Sur...
DataSheet: IRF7555TRPBF datasheetIRF7555TRPBF Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Base Part Number: IRF7555PBF
Supplier Device Package: Micro8™
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.25W
Input Capacitance (Ciss) (Max) @ Vds: 1066pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 55 mOhm @ 4.3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.3A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The IRF7555TRPBF is a P-Channel enhancement mode field effect transistor (FET) designed as part of an array of eight FETs of the same type. It works by utilizing a voltage applied between the gate and source to control the current flow in between the drain and the source. It has found application in many fields including switching, power management, audio amplifiers, level shifting and analog multiplexers, to name a few.

At its core, the IRF7555TRPBF is a field effect transistor that is composed of a source, drain, and gate. The source is the terminal from which electrons enter the device, the drain is the terminal from which electrons leave, and the gate is the terminal which controls the flow of current through the device. In the case of the IRF7555TRPBF, it is an enhancement mode P-Channel FET, which means that the gate-to-source voltage needs to be positive with respect to the source in order to turn on the channel between the source and drain. When the voltage applied to the gate is reduced, the channel current between the source and the drain is restricted.

The IRF7555TRPBF is designed to be part of a package called a Multiple Output Gate Array (MOGA). This is a type of integrated circuit consisting of eight identical FETs that can be connected in series or in parallel. The benefit of having a MOGA is that it enables advanced circuit topologies for complex operations. It also provides a convenient way to control the flow of current in these devices, as each transistor has its own control paths.

The IRF7555TRPBF is rated for a maximum drain-source voltage capability of 500V and can handle as much as 37A of drain current. This makes it suitable for applications that require very high voltages and currents. An example of such an application is high-power switching, where the FET is used for rapidly switching high currents. The FET can also be used for audio amplifiers, level shifting and analog multiplexers, and other power management applications.

The IRF7555TRPBF is a P-Channel enhancement mode field effect transistor that has found application in many applications and industries. It works by controlling the current flow in between the drain and the source by utilizing a voltage applied between the gate and source. It is designed to be part of a package called a Multiple Output Gate Array (MOGA) and can handle up to 500V and 37A of drain current. This makes it suitable for applications such as high power switching, audio amplifiers, level shifting, and analog multiplexers.

The specific data is subject to PDF, and the above content is for reference

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