IRF7314QTRPBF Allicdata Electronics
Allicdata Part #:

IRF7314QTRPBFCT-ND

Manufacturer Part#:

IRF7314QTRPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET 2P-CH 20V 5.2A 8SOIC
More Detail: Mosfet Array 2 P-Channel (Dual) 20V 5.2A 2.4W Surf...
DataSheet: IRF7314QTRPBF datasheetIRF7314QTRPBF Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 700mV @ 250µA
Base Part Number: IRF7314QPBF
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 2.4W
Input Capacitance (Ciss) (Max) @ Vds: 913pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 58 mOhm @ 5.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.2A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Part Status: Obsolete
Packaging: Cut Tape (CT) 
Description

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The IRF7314QTRPBF is a high power MOSFET array that is primarily used in motor control, lighting, power management, and other applications that require high currents and switching speeds. The array is designed for use in high speed automotive applications, making it an ideal choice for automotive engineers. In addition, the array is also suitable for commercial, industrial, and consumer applications, making it a versatile solution for a variety of applications.

The IRF7314QTRPBF\'s structure consists of two N-channel enhancement type MOSFETs that are connected in series. The MOSFETs are designed with high voltage and high speed operation for efficient and reliable operation. The device also features low gate charge, which reduces switching losses. In addition, the device is RoHS-compliant and has a drain-source avalanche energy rating of over 1J.

The IRF7314QTRPBF’s working principle is based on the principle of electrostatic attraction in which an electric field is generated between two conductors. This electric field is used to control the conduction of electrons through the MOSFET array by controlling the size of the electric field. When the electric field is increased, electrons are repelled and a voltage drop occurs, blocking current flow and switching the MOSFET off. Conversely, when the electric field is reduced, electrons are attracted and current flows, allowing current to flow through the array and switching the MOSFET on.

In terms of applications, the IRF7314QTRPBF array is particularly useful in automotive applications. Its high speed operation is perfect for controlling the current in motor control systems and the device\'s low gate charge helps to minimize switching losses. Additionally, the array\'s low drain-source avalanche energy rating helps to protect other components in the system. Moreover, the device is well suited for use in power management and lighting applications due to its high voltage operation and low on-resistance.

In summary, the IRF7314QTRPBF is a two MOSFET array that is well-suited for use in automotive, industrial, consumer, and power management applications. Its high-speed MOSFETs, low gate charge, and low avalanche energy ratings make it an ideal choice for these applications. Furthermore, its working principle based on the principle of electrostatic attraction provides efficient and reliable operation.

The specific data is subject to PDF, and the above content is for reference

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