IRF7751TRPBF

Vgs(th) (Max) @ Id:	2.5V @ 250µA
Base Part Number:	IRF7751PBF
Supplier Device Package:	8-TSSOP
Package / Case:	8-TSSOP (0.173", 4.40mm Width)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power - Max:	1W
Input Capacitance (Ciss) (Max) @ Vds:	1464pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:	44nC @ 10V
Series:	HEXFET®
Rds On (Max) @ Id, Vgs:	35 mOhm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C:	4.5A
Drain to Source Voltage (Vdss):	30V
FET Feature:	Logic Level Gate
FET Type:	2 P-Channel (Dual)
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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IRF7751TRPBF Application Field and Working Principle

The IRF7751TRPBF is a type of power electronic device known as a field effect transistor (FET). It is a type of transistor array designed to switch electricity more efficiently than a traditional discrete transistor. FETs are also suitable for switching high voltages, since their insulation properties are superior to those of traditional transistors.The IRF7751TRPBF is a N-channel MOSFET (metal oxide semiconductor field-effect transistor), which is a type of FET. A MOSFET consists of two types of electrodes: a source and a drain. Between these is an insulated gate which may be either positive or negative. When the insulated gate is positively charged, the N-channel MOSFET is said to be ‘on’ (i.e. conducting electricity). Conversely, when the insulated gate is negatively charged, the N-channel MOSFET is ‘off’ (i.e. not conducting electricity).The IRF7751TRPBF is designed to be very efficient in ‘on’ mode, with a low on-state resistance of 9 mΩ. This means that the required gate voltage is relatively low (5V to 12V) and it can handle very high currents (31A in continuous operation). In addition, the device features a low input capacitance of 1.9nF and a low capacitive gate charge of 10.7nC.These characteristics make the IRF7751TRPBF ideally suited for various applications, including in motor control systems, switched-mode power supplies, power converters, fusion inverters and other high-power switching systems. It is particularly useful for controlling high-power systems, since it can withstand high currents in both high and low voltage scenarios.In addition, the IRF7751TRPBF is particularly robust, with a maximum junction temperature limit of 175°C and a maximum drain-source voltage of 300V. It is also able to withstand high power dissipation levels and peak inrush currents. This makes it particularly suitable for applications requiring rapid switching, or those in which frequent transients occur.In summary, the IRF7751TRPBF is a robust, high-power N-channel MOSFET designed for high-current switching applications. It is highly efficient in ‘on’ mode, with low on-state resistance, an input capacitance of 1.9nF and a low capacitive gate charge of 10.7nC. Its high current capability and temperature endurance make it ideally suited for a variety of high-power systems.

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