IRF7341GTRPBF

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IRF7341GTRPBF is a high-power field-effect transistor developed by International Rectifier(IR). It is suited for general-purpose applications, such as voltage regulation, switching power supplies, DC/DC converters, and motor control. IRF7341GTRPBF belongs to Transistors - FETs, MOSFETs - Arrays product category.

The IRF7341GTRPBF is a N-channel HEXFET® power MOSFET constructed with a vertical DMOS technology and a nickel-chromium alloy gate. It is provided in a TO-252 package, with a lead frame structure consisting of a single drain connection embedded in a molding compound.

The IRF7341GTRPBF has a maximum drain current of 41.6A (ID), a maximum drain-source voltage of 100V (VDSS), and a maximum drain-source on-state resistance of 0.018ohm (RDS(on)). It also has a maximum gate threshold voltage of 1.7V (VGS), a maximum gate-source voltage of 20V (VGS(max)), a gate capacitance of 918pF (CG), a gate charge of 28nC (QGS), and an avalanche energy of 169mJ (EAS).

Recommended operating conditions for the IRF7341GTRPBF are as follows: junction temperature range of -55°C - 150°C (TJ), storage temperature range of -55°C - 150°C (TSTG), and lead temperature soldering range of 260°C ± 5°C for 10 seconds (TL).

The working principle of the IRF7341GTRPBF is quite simple; it has an N-Channel MOSFET. Its operation is controlled by a voltage applied to the Gate terminal. When a voltage is applied to the Gate terminal, a channel forms between the Drain and Source of the MOSFET. This forms a low resistance path between the Drain and Source, allowing current to flow. Once a certain voltage is applied to the Gate terminal, the MOSFET starts functioning.

The IRF7341GTRPBF is suitable for a wide range of applications, including voltage regulation, switching power supplies, DC/DC converters, motor control, and consumer electronics. Since it is a high-power MOSFET, it is most commonly used in applications that require high current and power handling capabilities. It can also be used to switch high-voltage loads, and its low on-resistance and fast switching speeds make it ideal for applications requiring precise control of high-power devices.

The IRF7341GTRPBF is only recommended for use in new designs. It is not suitable for use in existing designs, as it may cause interference with other components. It should also be used in conjunction with appropriate heat sinks and gate drivers, as failure to do so could result in device damage.

The IRF7341GTRPBF is a high-powered MOSFET that can be used for a wide range of applications. It has a low drain-source on-state resistance, fast switching speeds, and can handle high-power loads. It is easy to use and requires minimal external components, making it ideal for use in a wide range of applications.

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