IRF7506TRPBF Allicdata Electronics

IRF7506TRPBF Discrete Semiconductor Products

Allicdata Part #:

IRF7506TRPBFTR-ND

Manufacturer Part#:

IRF7506TRPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET 2P-CH 30V 1.7A MICRO8
More Detail: Mosfet Array 2 P-Channel (Dual) 30V 1.7A 1.25W Sur...
DataSheet: IRF7506TRPBF datasheetIRF7506TRPBF Datasheet/PDF
Quantity: 4000
Stock 4000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 1V @ 250µA
Base Part Number: IRF7506PBF
Supplier Device Package: Micro8™
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.25W
Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 270 mOhm @ 1.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.7A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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IRF7506TRPBF Application Field and Working Principle

The IRF7506TRPBF is a N-Channel MOSFET device developed by International Rectifier (IR). It\'s a 3-pin package with an 80V (VDS) drain-source voltage and a maximum drain current at 8A. It has a very low on-resistance (< 6mΩ) and a high power dissipation (W) capability. This powerful device is typically used in automobile, computer and industrial applications for low-noise switching, low power output stage and low-side switching.

Application Field

With its versatility and powerful On-Resistance (Rds) feature, the IRF7506TRPBF is commonly used in various applications, especially those requiring exceptional switching power, such as motor control, DC-DC converters, DC motor control and audio amplifiers.

The device is also suitable for use in battery management systems and portable appliances, specifically those using a 4-wire interface for a maximum integration of voltage, current and temperature sensing functions. In this application, the device provides an impressive data transmission rate with an ultra-low power dissipation level.

Working Principle

The IRF7506TRPBF is a three-terminal N-Channel MOSFET device that is designed to control and switch on/off the flow of electrical current between the source and the drain pins. It works with the action of gate voltage, which is generally supplied externally by the user. The controlled current flows through the Drain (electricity output) to the Source (electricity input).

The voltage at the gate controls the level of the device’s resistance. When the voltage at the gate falls to a certain level, termed as the “threshold”, the resistance of the Device will drop, thus allowing electrical current to flow from the source to the drain. When the gate voltage is increased, the resistance of the Device increases, thus reducing the flow of current.

The power dissipation capability of the IRF7506TRPBF is also dependent upon the Drain-Source Voltage (VDS) applied across it. The device can withstand high current levels when used under ideal conditions.

Advantages

The IRF7506TRPBF provides a number of advantages, including:

  • High On-resistance — The device features an extremely low number of on-resistance, making it very efficient in terms of power consumption and saving energy costs.
  • High power dissipation — The device has a high power dissipation capability, allowing it to switch and hold high power loads.
  • Good switching speed — The device operates with a fast switching speed, providing smooth transition and no signal interference.
  • Easy to mount — The device features a very compact design, with a fast mounting process for use in in-line products.
  • Low impedance — The device provides a low impedance level, meaning that it can provide smooth transition with no signal interference.

Conclusion

The IRF7506TRPBF is a robust, versatile N-Channel MOSFET device with a wide range of applications. It features an impressive combination of On-Resistance, power dissipation and switching speed, making it suitable for use in a variety of end-user products and operations. Additionally, the device delivers reliable performance and is relatively easy to mount.

The specific data is subject to PDF, and the above content is for reference

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