IRF7807ZTRPBF

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

IRF7807ZTRPBF is a 80V high power Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) specifically designed for use in high voltage, high power applications such as motor control, load switching and power converters. It is also used in industrial and consumer applications as a switch or buffer.

The IRF7807ZTRPBF is an N-channel Enhancement-Mode MOSFET. It has an integrated body diode and a drain saturation voltage (VDS) of 80V, making it ideal for high voltage applications. It has an on-resistance (RDSon) of 1.4Ω and a source-drain current (ID) of 180A, giving it a high power transfer capability. The device also has a maximum gate-source voltage rating of ±20V and a maximum operating temperature of 175°C.

The IRF7807ZTRPBF operates under the principle of "enhancement-mode conduction." In an enhancement-mode device, the current flow through the device is dependent on the voltage applied to the control gate. When the gate voltage is more positive than the source voltage, the transistor is said to be "on". This is referred to as the "enhancement mode." When the gate voltage is more negative than the source voltage, the transistor is said to be "off". This is referred to as the "depletion mode."

The IRF7807ZTRPBF is used primarily in motor control and power converters. In motor control, it is used as a switch or buffer to control the current flow to the motor. In power converters, it is used for voltage regulation, to control the flow of current to various components in the system. It is also used in consumer applications, such as for switching power supplies and for power management.

In conclusion, the IRF7807ZTRPBF is a 80V enhancement-mode MOSFET. It is used mainly in motor control and power converter applications, but is also used in consumer applications. It has a drain-source voltage rating of 80V and a drain saturation voltage of 1.4Ω. It is capable of handling high power transfer applications and has a maximum gate-source voltage rating of ±20V.

The specific data is subject to PDF, and the above content is for reference