IRF8010STRLPBF Discrete Semiconductor Products

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IRF8010STRLPBF is a type of the Field Effect Transistor (FET) which is belonging to the category of the single MOSFETs. It is primarily an N-channel enhancement-mode MOSFET which is developed by International Rectifier Corporation. The purpose of this device is primarily as a low-side Switch/Driver in low voltage, high current power switching and LED driver applications. In this article, it will further discuss the application fields and the working principles of this device.

Features

• Optimized for low-side switching/driving applications
• Suited for DC/DC Converters
• High current continuous drain current capability 20A
• Rated Drain-Source voltage of 20V
• Low input capacitance, Drain-Source ON Resistance
• Lower gate charge
• EMI reduction
• Low-RDS(ON)

Package

IRF8010STRLPBF is offered in a low profile Power SO-8 (FLP) surface-mount package consisting of a single N-channel.

Application Fields

IRF8010STRLPBF has many different application fields. It can be used in the various power applications such as: LED drivers, motor drives, load switches, and converters. It also can be used in communications, industrial, and consumer electronics. It is particularly suited for three-phase motor control driving applications due to its lower gate charge.

Working Principles

The IRF8010STRLPBF is based on the Field Effect Transistor (FET) principle. This type of transistor has a three-terminal device in which a Voltage between the gate-source terminals (VGS) is used to control a current through the other two, between drain-source terminals (VDS). In the basic enhancement mode operation when there is a voltage applied to the gate terminal and this voltage is higher than the threshold voltage, VGS (th), a conducting channel is formed between the Drain and the Source, thus providing a path for the current. If the voltage difference between the gate and the source exceeds the threshold voltage, the transistor is in the on-state. The on-state resistance, known as the Drain-Source On Resistance (RDS(on)) is the value in Ohms when VGS = VDS = VGS(th). When the voltage between the gate and the source is lower than the threshold voltage, the transistor is in the off-state. Thus, the drain-source path is blocked and no current can flow.

In the particular case of the IRF8010STRLPBF, it is a N-channel enhancement-mode MOSFET which can be used for various low-voltage and high-current switching and driving applications. It has a rated drain-source voltage of 20V and a continuous drain current capability of 20A. Furthermore, this device offers low RDS(ON) and lower gate charge which makes it suitable for use in three-phase motor control driving applications.

Conclusion

In summary, IRF8010STRLPBF is an N-channel enhancement-mode MOSFET belonging to the category of the single FETs. It is rated a drain-source voltage of 20V and a continuous drain current capability of 20A which makes it ideal for low-side switching/driving applications such as in motor drives, load switches, and converters. It also offers low RDS(ON) and lower gate charge which makes it suitable for use in three-phase motor control driving applications.

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