IRFI740GLC

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-220-3 Full Pack, Isolated Tab
Supplier Device Package:	TO-220-3
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	40W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1100pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	39nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	550 mOhm @ 3.4A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	5.7A (Tc)
Drain to Source Voltage (Vdss):	400V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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Introduction

The IRFI740GLC is a power Field Effect Transistor (FET) manufactured by Infineon Technologies AG. It is a single N-Channel Enhancement Mode FET designed for use in high power applications, such as high power amplifiers, motor controls and switching applications. As with all FETs, the IRFI740GLC is based on MOS (Metal-Oxide Semiconductor) technology.

The Properties of the IRFI740GLC

The IRFI740GLC has a continuous drain current rating of 70A and is capable of switching currents up to 210A. The typical gate threshold voltage is 2.2V and the maximum gate threshold voltage is 4.5V. The maximum drain source breakdown voltage is 100V and the maximum drain source resistance is 12mΩ. The maximum junction temperature for the FET is 175°C, with a typical thermal resistance of 1.2°C/W.

Features and Benefits

The IRFI740GLC is particularly well-suited for applications in which a high current and rapid switching are required, such as high power amplifiers. The FET is designed with a low RDS(on) and has a high current rating, allowing it to efficiently switch high current loads. The gate threshold voltage is low, allowing excellent gate control and low gate drive power requirements. The maximum junction temperature is high, allowing for excellent reliability and long life.

Applications

Due to its high current rating, the IRFI740GLC is ideal for a range of high power applications, such as high power amplifiers, motor controls and switching applications. It can also be used in LED lighting applications, where its high current and low RDS(on) make it an ideal choice.

Working Principle

The IRFI740GLC is an N-channel FET, meaning it is made up of an N-type semiconductor material. This material has regions of negative charge, called electrons, that are free to move. When a voltage, usually referred to as a gate voltage, is applied to the FET, the electrons move towards the positive gate voltage and create a conductive channel between the source and the drain. This conductive channel allows current to flow from the source to the drain and is what makes the FET work.The strength of the current that flows is directly related to the gate voltage. As the gate voltage is increased, the current flowing is increased, since more electrons are pulled towards the positive gate voltage. Conversely, if the gate voltage is decreased, the current flowing is decreased, since fewer electrons are pulled towards the positive gate voltage. This is the basic principle behind the operation of the IRFI740GLC.

Conclusion

The IRFI740GLC is an ideal choice for applications requiring high current and rapid switching. As a high power N-Channel FET, the IRFI740GLC offers excellent gate control, low RDS(on), high current rating and high reliability. The FET is suitable for use in a range of high power applications, such as high power amplifiers, motor control and switching applications. Its operation is based on the same principles as other FETs, whereby the current flow is controllable by the gate voltage.

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