Allicdata Part #: | IRFI720G-ND |
Manufacturer Part#: |
IRFI720G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 400V 2.6A TO220FP |
More Detail: | N-Channel 400V 2.6A (Tc) 30W (Tc) Through Hole TO-... |
DataSheet: | IRFI720G Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 Full Pack, Isolated Tab |
Supplier Device Package: | TO-220-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 30W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 410pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 20nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 1.8 Ohm @ 1.6A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 2.6A (Tc) |
Drain to Source Voltage (Vdss): | 400V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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IRFI720G is a general-purpose enhancement-mode insulated gate type field-effect transistor (FET), also known as a metal-oxide FET (MOSFET). It is a single-n-channel device and is part of the larger IRL series of MOSFET transistors, which are used frequently in design applications thanks to their high power efficiency and switching speeds. This article provides an overview of the IRFI720G application field and working principle.
Applications of the IRFI720G
The IRFI720G is suitable for use in a wide range of applications, particularly those that require high-speed operations, as well as higher current or voltage load switching. Its major application fields include power and energy management, automotive and industrial motor control, communications, lighting control, robotics, and medical and industrial electronics.
In power and energy management, the device is used as a switch in flyback converters, PFC circuits, DC/DC converters, and peak current mode converters, to name a few. It is also used as a switch in lighting control systems to regulate the light emitted by an LED and in robotics to control the movement of robotic arms. In automotive and industrial motor control, it is used to control the speed of three-phase motors.
The IRFI720G is also used in the telecommunication sector, especially in network routers, switches, modems, and wireless controllers. In medical and industrial electronics, it is used in medical diagnostic equipment and industrial controllers.
Working Principle of the IRFI720G
The IRFI720G is a single-n-channel MOSFET (metal-oxide FET) that is composed of a body region, source region, and a drain region. The body region, also referred to as the substrate, is formed by thieving an oxide layer over a single semiconductor material. The oxide layer acts as an insulating barrier between different regions of the MOSFET.
The source region is positively charged relative to the substrate, while the drain region is negatively charged, creating a potential barrier between them. When a positive voltage is applied to the gate region, it attracts electrons to the oxide surface, forming a conductive channel that connects the source and drain regions. This enables current to flow between them. As such, the IRFI720G operates as a switch; when a voltage is applied to the gate, current flows between the source and drain.
The maximum operating voltage of the IRFI720G is 60V, with an on-state resistance RDS(on) of 2 ohms. Its maximum current rating is 15A and its minimum breakdown voltage is 25V. Its maximum peak gate current is 15mA, with a gate-to-source threshold voltage of +/-2V. The device has a maximum operating temperature of 150°C, making it well-suited for use in higher-temperature environments.
Conclusion
In summary, the IRFI720G is a widely-used single-n-channel MOSFET that is widely applicable in a variety of industries, such as power and energy management, automotive and industrial motor control, communications, lighting control, robotics, and medical and industrial electronics. It operates by having a positive charge applied to the gate region which creates a conductive channel between the source and drain regions, allowing current to flow between them. The device is capable of withstanding high voltages and temperatures, and has a maximum current rating of 15A and a RDS(on) of 2 ohms.
The specific data is subject to PDF, and the above content is for reference
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