IRFI744GPBF Allicdata Electronics
Allicdata Part #:

IRFI744GPBF-ND

Manufacturer Part#:

IRFI744GPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 450V 4.9A TO220FP
More Detail: N-Channel 450V 4.9A (Tc) 40W (Tc) Through Hole TO-...
DataSheet: IRFI744GPBF datasheetIRFI744GPBF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-220-3 Full Pack, Isolated Tab
Supplier Device Package: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 40W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 630 mOhm @ 2.9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 4.9A (Tc)
Drain to Source Voltage (Vdss): 450V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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Introduction to IRFI744GPBF

The IRFI744GPBF from Infineon is a general purpose dual N-channel MOSFET that is designed for use in power management applications. The IRFI744GPBF is capable of providing high current switching and low threshold voltage (Vth). The MOSFET is also suitable for use in DC/DC converters, power amplifiers, voltage-mode switching regulators, as well as battery-based applications. The IRFI744GPBF can handle up to 50A peak current and 100A average current. The device is available in a small PowerPAK SO-8 package.

Application Fields of IRFI744GPBF

The IRFI744GPBF is suitable for a variety of application fields such as automotive and industrial applications. The device is particularly suitable for high-current and high-efficiency application requirements. It can also be used in applications where size and weight are an issue due to its small footprint and low thermal resistance. As such, the IRFI744GPBF is an effective choice for applications such as DC/DC converters, power amplifiers, and voltage-mode switching regulators. Additionally, the IRFI744GPBF can also be used in battery-based applications such as laptop chargers, high-current power supplies, and battery chargers.

Working Principle of IRFI744GPBF

The IRFI744GPBF is a dual N-channel MOSFET based on the N-channel FinFET process technology. In a MOSFET device, the electrical field induced by the gate voltage on the N-channel is used to control the flow of current through a MOSFET. The IRFI744GPBF is capable of operating in both the linear and saturation regions, allowing for low-loss voltage regulation and high-efficiency switching. The device also has fast switching speeds, low gate charge and low Rds(on), making it an ideal choice for applications in power management and DC/DC conversion.

The IRFI744GPBF is capable of providing high current switching due to its low threshold voltage (Vth) and low RDS(on). The device is also able to operate at both high frequencies and low frequencies due to its fast switching speed, low gate charge and low RDS(on). Additionally, the device has a low total harmonic distortion, making it suitable for applications in audio and radio frequency (RF) circuits. Lastly, the device also has a low static power dissipation and low thermal resistance, allowing it to dissipate heat more efficiently.

In conclusion, the IRFI744GPBF is an effective solution for power management and DC/DC conversion applications, due to its low threshold voltage, high current switching, low gate charge and low RDS(on). The device is also suitable for applications in audio and RF circuits due to its low total harmonic distortion. Additionally, the device has a small footprint and low thermal resistance, allowing it to dissipate heat more efficiently. As such, the IRFI744GPBF is an ideal choice for a variety of automotive and industrial applications.

The specific data is subject to PDF, and the above content is for reference

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