IRFI710G

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IRFI710G is a high performance enhancement-mode MOSFET device developed using International Rectifier\'s advanced HEXFET® technology. This device utilizes extremely advanced processing techniques to achieve consistent and high-yield results. The IRFI710G is designed to provide superior stability and reliability in both static and dynamic applications. Its high performance and outstanding features make it ideal for high frequency applications.

The IRFI710G is available in an N-channel configuration and operates in enhancement-mode. This mode utilizes positively-charged electrons to create a conductive path between the drain and source. When the gate voltage exceeds the threshold voltage, this conductive path is created and the current flow is enabled.

The IRFI710G has a low on-resistance of 0.46 ohms, and a fast switching speed of 40V/ns. This high-speed switching transition makes it suitable for high-speed switching applications. It also has an avalanche capability and can withstand a drain-source voltage of up to 950 volts. The maximum gate-source and gate-drain voltage of the device are ±20V. The maximum power dissipation and the thermal resistance at junction-ambient combination are rated at 2.1W and 22°C/W respectively.

The IRFI710G is offered in a compact KDPAK package which enables it to be incorporated into very tight spaces. The device has a wide operation temperature range of -55°C to 175°C. It is also available in lead-free versions and offers excellent gate-charge efficiency.

The IRFI710G has a variety of potential applications in telecom, computing, and consumer electronics. It can be used as a high frequency switching device in power management, discrete AC-DC and DC-DC converters, and in various rectifiers, inverters, and comparable power switching circuits.

The IRFI710G is a reliable and high performance device, making it suitable for a wide range of power switching applications. With its low on-resistance, fast switching speeds, and robust construction, the device is an excellent choice for those looking for a reliable and high performance MOSFET.

The specific data is subject to PDF, and the above content is for reference